Full text of DOI:10.1063/1.99293

Growth of high quality indium phosphide from metalorganic sources by molecular beam
epitaxy
D. A. Andrews, S. T. Davey, C. G. Tuppen, B. Wakefield, and G. J. Davies
Citation: Applied Physics Letters 52, 816 (1988); doi: 10.1063/1.99293
View online: http://dx.doi.org/10.1063/1.99293
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/52/10?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
132.174.254.155 On: Tue, 23 Dec 2014 23:04:15

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
132.174.254.155 On: Tue, 23 Dec 2014 23:04:15

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
132.174.254.155 On: Tue, 23 Dec 2014 23:04:15