Full text of DOI:10.1063/1.106234

Limiting conditions of Si selective epitaxial growth in Si2H6 gassource molecular
beam epitaxy
K. Aketagawa, T. Tatsumi, and J. Sakai
Citation: Applied Physics Letters 59, 1735 (1991); doi: 10.1063/1.106234
View online: http://dx.doi.org/10.1063/1.106234
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/59/14?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.138.73.68 On: Mon, 22 Dec 2014 18:40:35

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.138.73.68 On: Mon, 22 Dec 2014 18:40:35