Si nanowires synthesized by laser ablation of mixed SiC and SiO2 powders

Article abstract of DOI:10.1016/S0009-2614(99)01119-7

By using a KrF excimer laser to ablate a target of SiC powder mixed with 10 wt.% SiO₂ powder at 1400°C, Si nanowires were deposited on the inner wall of a ceramic tube. Transmission electron microscopy shows that the nanowires are around 14 nm in diameter and co-exist with a small amount of nanoparticles. High-resolution transmission electron microscopy shows that the nanowires are crystalline Si nanowires and the nanoparticles are cubic SiC. The intergrowth of heterocrystal nanowires and nanoparticles verifies that the oxide-assisted growth model of Si nanowires is reasonable.

Full text of DOI:10.1016/S0009-2614(99)01119-7

2
6 November 1999
Chemical Physics Letters 314 Ž1999. 16–20
www.elsevier.nlrlocatercplett
Si nanowires synthesized by laser ablation of mixed SiC
and SiO powders
2
Y.H. Tang, Y.F. Zhang, H.Y. Peng, N. Wang, C.S. Lee, S.T. Lee )
Center of Super-Diamond and AdÕanced Films (COSDAF) and Department of Physics and Materials Science,
City UniÕersity of Hong Kong, Hong Kong, China
Received 22 July 1999; in final form 12 September 1999
Abstract
By using a KrF excimer laser to ablate a target of SiC powder mixed with 10 wt.% SiO powder at 14008C, Si nanowires
2
were deposited on the inner wall of a ceramic tube. Transmission electron microscopy shows that the nanowires are around
1
4 nm in diameter and co-exist with a small amount of nanoparticles. High-resolution transmission electron microscopy
shows that the nanowires are crystalline Si nanowires and the nanoparticles are cubic SiC. The intergrowth of heterocrystal
nanowires and nanoparticles verifies that the oxide-assisted growth model of Si nanowires is reasonable. q 1999 Elsevier
Science B.V. All rights reserved.
1
. Introduction
most promising for synthesizing SiNWs because this
method can produce free-standing nanoscale materi-
als in high yield with controllable experimental con-
ditions. Other nanoscale materials, including C60
w10x, b-C N w11x, single-wall carbon nanotubes w12x,
were first synthesized by this method. The starting
materials for deposition of SiNWs by the laser abla-
tion method include Si powder mixed with catalyst
Quasi one-dimensional Si nanowires ŽSiNW. have
attracted much attention w1–4x. As the miniaturiza-
tion of present microelectronics continues, future
nanoelectronics need nanoscale functional semicon-
ductor materials. SiNWs naturally become one of the
promising candidates. Current research on SiNWs
focuses primarily on growth methods and starting
materials. The reported growth methods include elec-
tron beam ŽEB. lithography w5x, reactive ion etching
w6x, the scanning tunneling microscope ŽSTM. w7x,
thermal evaporation w8,9x and laser ablation w1,2x.
3
4
w1x or Si powder with SiO powder w13x. However, a
2
target made of SiC powder mixed with SiO powder
2
is interesting since electronic-grade silicon ŽEGS. is
made from the reaction of SiC powder and SiO2
powder w14x. EGS is a polycrystalline material of
high purity which is the raw material for the prepara-
tion of single-crystal silicon. In this Letter, we report
the synthesis of SiNWs by using KrF excimer laser
to ablate the target of SiC powder mixed with 10
Among these methods, laser ablation seems to be the
)
Corresponding author. Fax: q852-2788-7830; e-mail:
apannale@cityu.edu.hk
wt.% SiO powder at 14008C.
2
0
009-2614r99r$ - see front matter q 1999 Elsevier Science B.V. All rights reserved.
PII: S0009-2614Ž99.01119-7

Y.H. Tang et al.rChemical Physics Letters 314 (1999) 16–20
17
2
. Experimental
A schematic diagram of the equipment used is
shown in Fig. 1. The target was made by pressing
SiC powder mixed with 10 wt.% SiO at 1508C for
2
2
4 h under a hydraulic press. After the target was
placed in the high-temperature zone inside the ce-
ramic tube, the tube was evacuated by a mechanical
rotary pump. Argon gas was kept flowing through
the tube at a rate of 50 sccm Žstandard cubic cen-
timeter. and a pressure of 700 Torr. After the tem-
perature achieved 14008C, the laser ablation process
was started. A KrF excimer laser beam Ž248 nm. of
4
00 mJ per pulse and a pulse width of 34 ns at 10 Hz
ablated the target. The total duration of ablation was
h and the size of the laser spot on the target was
2
about 1=3 mm. Two layers of sponge-like webs, a
yellow web and a green web, were deposited on the
inner wall of the tube as shown in Fig. 1. The yellow
web was 5 times more abundant than the green web
by weight. The products were mounted on copper
grids for transmission electron microscopy ŽTEM.
observations ŽPhilips FEGCM200..
3
. Results and discussion
Fig. 2. Morphology of Si nanowires taken from the yellow
product. Ža. Low-magnitude TEM image of Si nanowires. The
inset is SAED pattern. Žb. HRTEM image of a typical Si nanowire.
The growth direction goes along w111x.
The TEM micrograph in Fig. 2a shows the typical
morphology of the materials in the yellow web. It
can be seen that the product consists of nanowires
with an average diameter of 14 nm. Most of the
SiNWs are consist of straight and smoothly curved
parts. The morphology is a common characteristic of
various nanowires, such as SiC nanowires w15x and
carbon nanowires w16x. Although the nanowires have
a high ratio of length to diameter, the diameter
remains the same throughout the entire nanowire.
The inset is a selected-area electron diffraction
ŽSAED. pattern taken from the nanowires. The
diffraction rings match well with the Ž111., Ž220.
and Ž311. diffraction rings of silicon with a diamond
structure. Analysis using energy dispersive X-ray
spectroscopy ŽEDS. equipped on TEM confirmed
that the nanowires have a crystalline Si core and an
amorphous silicon oxide outer layer. Fig. 2b is a
micrograph of high-resolution TEM ŽHRTEM. of a
typical SiNW. It further confirms that the nanowires
are crystalline SiNWs. Two groups of crystal lattices
have the angle in 708 which means the spots con-
sisted by 111 crystalline planes. Thus the growth
Ä 4
direction is along w111x.
In addition to the yellow web as the main product,
there still exists a green web, which has not been
Fig. 1. The schematic diagram of the laser ablation apparatus.

1
8
Y.H. Tang et al.rChemical Physics Letters 314 (1999) 16–20
spacing of 0.25 nm. This value fits with the standard
111 crystalline plane of b-SiC. Grain boundaries
Ä
4
and microtwins are the main defects observed.
The results of XRD and Raman analysis also give
the same conclusions. Fig. 4a shows the XRD spec-
trum of the green product. The XRD measurements
was carried out by using Cu Ka radiation at room
temperature in a Siemens D500 system. The spec-
trum shows two sets of peaks. One set consists of the
Ž111., Ž220. and Ž311. peaks of Si which are from
the SiNWs. The other set consists of the Ž111., Ž220.
and Ž311. peaks of b-SiC which are from the b-SiC
nanoparticles. The positions of the peaks fit the
values in the standard XRD handbook w17x. The
Raman scattering measurement was performed at
room temperature using a micro-Raman Renishaw
y1
y1
2
000 system with 1 cm
resolution and 0.4 cm
Fig. 3. TEM images of the green web in which Si nanowires
coexist with SiC nanoparticles. Ža. Small amount of SiC nanopar-
ticles which attach Si nanowires. The inset is SAED pattern. Žb.
HRTEM image of the b-SiC nanoparticles. The fringes are Ä1114
lattice planes with a spacing of 0.25 nm.
found in the SiNWs products by using other starting
materials w13x. The results of HRTEM show that the
green web is a mixture of SiNWs and cubic SiC
Žb-SiC. nanoparticles as shown in Fig. 3a. Fig. 3a
shows that some nanoparticles co-exist with the Si
nanowires. The sizes of the nanoparticles range from
several nanometers to 80 nm. The nanoparticles pos-
sess irregular outlines. The inset SAED pattern shows
there are two sets of rings. One consists of the Ž111.,
Ž220. and Ž311. rings of silicon. The other corre-
sponds to the Ž111., Ž220. and Ž311. rings of b-SiC.
This confirms that the sample is a mixture of SiNWs
and b-SiC. The results of HRTEM show that the
nanowires are SiNWs as shown in Fig. 2b. The
nanoparticles are b-SiC nanoparticles whose typical
morphology are shown in Fig. 3b. In this figure, the
Fig. 4. The spectrum of X-ray diffraction and the Raman spectrum
recorded from the green web.
fringes are 111 crystalline planes with a lattice
Ä 4

Y.H. Tang et al.rChemical Physics Letters 314 (1999) 16–20
19
reproducibility. The excitation source was the 514.5
nm line of an argon ion laser with a spot size of 10
mm in diameter and a power of 4 mW. The Raman
result is shown in Fig. 4b. The peak at 780 cmy1 is
the characteristic peak of b-SiC w18x. The other peak
different. The Si nanowire shown in Fig. 2b has a
thick amorphous silicon oxide outer layer which is
formed from the semi-melting SiO layer. However,
the b-SiC nanoparticle shown in Fig. 3b has nearly
no amorphous outer layers. So the one-dimensional
growth of b-SiC can not be achieved.
y1
at 950 cm is second-order peak of Si. The peak of
SiC is asymmetric. This is possibly due to the
nanoscale size effect of the SiC nanoparticles w19,20x.
We propose that the growth mechanism of the Si
nanowires can be explained by the oxide-assisted
growth model w8,13x recently proposed by us. In this
model, a liquid SiO layer was formed on the tip of
the Si nanowire. It is this SiO liquid layer which
assists the nanowire growth. In the present case, SiO
came from the chemical reaction between SiC and
4
. Conclusions
We have synthesized Si nanowires from SiC pow-
ders mixed with SiO2 powders which are used to
synthesize single crystalline silicon in the present
semiconductor industry. The crystalline Si nanowires
are around 14 nm in diameter and co-exist with
small amounts of b-SiC nanoparticles. The growth
of the nanowires is proposed to be via the intermedi-
ate material SiO which was generated by the chemi-
SiO . Analogous to the synthesis of industrial sili-
2
con, the overall reaction w14x was
SiC
Ž
solid
.
qSiO2
Ž
solid
.
cal reaction between SiC and SiO . The experimen-
2
sSi
Ž
solid
.
qSiO
Ž
gas
.
qCO
Ž
gas .
.
tal results indicate that the reaction to synthesizing
industrial silicon can also be that of Si nanowires.
This experiment also gives support to the oxide-as-
sisted growth model of SiNWs.
The reaction was activated by the excimer laser. The
SiO vapor was carried by the flowing gas and de-
posited forming Si nanowires according to the
oxide-assisted growth model w8,13x.
It should be mentioned that no SiC nanowires
were found in the product. Moreover, the b-SiC
nanoparticles were only formed inside the second
web Žgreen web.. Since no b-SiC nanoparticles can
be found in the first web Žyellow web., it implies
Acknowledgements
Financial support by the Research Grants Council
of Hong Kong under Grant No. 9040365 is gratefully
acknowledged.
that the b-SiC nanoparticles were also grown by the
vapor reaction and not by direct ablation. Otherwise,
they should also be formed inside the first web
which was closer to the target. Their growth only
inside the second web may be due to the suitable
growth temperature. b-SiC nanoparticles can be
readily formed by the chemical reaction between SiO
and CO. Unlike Si which grows as the one-dimen-
sional nanowires, b-SiC can not grow one-dimen-
sionally but remain as three-dimensional nanoparti-
cles. We suspect that this is probably due to the fact
that b-SiC can not form a semi-melting phase at the
relatively low temperature Ž;9508C.. According to
the oxide-assisted growth model w8,13x, one-dimen-
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