Journal of The Electrochemical Society, 153 ͑12͒ G1025-G1031 ͑2006͒
G1025
0013-4651/2006/153͑12͒/G1025/7/$20.00 © The Electrochemical Society
Iron Thin Films from Fe„CO…5 and FeCp2/H2O under
Atmospheric Pressure
z
*
*
F. Senocq, F.-D. Duminica, F. Maury, T. Delsol, and C. Vahlas
Centre Interuniversitaire de Recherche et d’Ingénierie des Matériaux CNRS/INPT, ENSIACET, 31077
Toulouse Cedex 4, France
Iron layers were first obtained from iron pentacarbonyl in metallorganic chemical vapor deposition ͑MOCVD͒ process under
atmospheric pressure, in the temperature range 473–773 K, in a vertical cold wall reactor. Films of good purity were obtained with
or without hydrogen as co-reactant, no chemical additives being used. The experiments showed that the velocity of the gas stream
and, to a lower extent, the precursor molar fraction are the key parameters to be controlled, in order to monitor film growth rate
and purity. In a second step, Fe thin layers were obtained by atmospheric pressure MOCVD starting from the reactive gas mixture
FeCp2 and H2O in the temperature range 973–1073 K. A thermochemical simulation of the Fe-C-H-O system allowed optimum
processing conditions to be approached. X-ray diffraction and microprobe analysis showed that the highest iron content in the
layer was obtained for H2O/FeCp2 ratios between 4 and 6. Film growth occurs in two steps: the initial formation of a black,
powdered, and porous layer that becomes densified as a result of the grain growth on increasing the deposition time in order to
form compact gray metal films. This two-step mechanism was confirmed by kinetic and in situ IR pyrometric observations.
© 2006 The Electrochemical Society. ͓DOI: 10.1149/1.2352050͔ All rights reserved.
Manuscript submitted April 7, 2006; revised manuscript received July 18, 2006. Available electronically October 10, 2006.
Our aim was to study chemical vapor deposition of iron thin
films for metallurgical applications. Indeed, continuous deposition,
or strip coating, can be highly relevant as a form of surface treat-
ment in metallurgy. A suitable process needs at least to fulfill three
requirements: ͑i͒ deposition at low temperature to avoid dimen-
sional and structural changes of the steel substrate, ͑ii͒ a high
growth rate to compensate for the speed of the strip, and ͑iii͒ op-
eration at atmospheric pressure, which is highly preferable for tech-
nical and economical reasons. The use of metallorganic compounds
as molecular precursors satisfies the first requirement. For the other
two, new processes and optimization of metallorganic chemical va-
por deposition ͑MOCVD͒ processes already reported in the litera-
ture are necessary.
Compared to other metals, few open scientific publications refer
to thermal CVD of iron, even though many are devoted to the prepa-
ration of iron oxides, sulfides, or silicides. Little attention seems to
have been paid to the optimization of the growth rate, which is
nevertheless necessary for a continuous deposition process. More-
over, a limited number of molecular precursors have been studied,
namely, Fe͑CP͒2,1 Fe͑CO͒5,2-7 Fe2Cp2͑CO͒4,8 Fe͓N͑SiMe3͒2͔3,9
and Fe͑COT͒͑CO͒3.10 Most of the processes reported operate under
low pressure, and rare are those working under atmospheric pres-
sure. Highly textured ͓011͔ ␣ iron films ͑bcc͒ are reported to have
been prepared from ferrocene1 under 105 Pa of H2, in the tempera-
ture range 673–1173 K, but with selective deposition, and no
growth rate is given. In the case of iron pentacarbonyl, high growth
rates are reported, up to 2 m/h,5at moderate temperature and under
atmospheric pressure of hydrogen. However, rising temperature
lowers the growth rate,5,6 but the use of additives like 1,2,3,4,5-
pentamethyl-cyclopentadiene in the vapor phase softens this trend,6
In addition to the open literature, patents refer mainly to two
where L is either a phosphine, a phosphite, or an amine group, or the
family ͓Fe͑CO͒ ͔ ͑C4R4͒, where each R can be H, a halide, OH, an
3 2
alkyl, or an aryl moiety. Each of the molecules proposed can be
prepared using Fe͑CO͒ as a starting material. For example,
2
Fe͑CO͒ ͑NMe3͒, Fe͑CO͒ ͓P͑OMe͒ ͔, and Fe2͑CO͒ ͑C4H4͒ were
4
4
3
6
used, without carrier gas, under dynamic vacuum ͑0.13–1.33 Pa͒ to
prepare smooth and shiny films with a metallic appearance, but con-
taining high amounts of hetero-atoms ͑as high as 34 atom % C, or
23 atom % P͒. This is evidence that a clean decomposition of these
metallorganic complexes is not observed. Moreover, the toxicity of
Fe͑CO͒ and its derivatives limits their use, at least in large-scale
5
processes. To bypass this shortcoming, ferrocene has been used, i.e.,
under oxidative atmosphere, to obtain thin oxide layers, as patented
by Kane and Schweizer in 1975.16 In other conditions, Mukaida et
al. patented the use of FeCp2 for the preparation of -FeSi2.17 In
both cases, the toxicity of Fe͑CO͒ was put forward to account for
5
not using this molecule. The alkyl-cyclopentadienyl derivatives
͓general formula: ͑R1C5H4͒2-pM͑R2͒p, where R1 is alkyl, R2 is H, F,
or alkyl, and M is a metal, which can be Fe͔ have been proposed18
to obtain oxide layers under oxidative atmosphere. The precursors
belonging to this family are claimed to have vapor pressures over
13 Pa at 373 K, but no specific example of iron oxide deposition is
given. Besides these two families, iron acetylacetonate has been
proposed for magnetic coating of iron oxide spinels,19,20 with or
without O2, but it was established that pure iron films were out of
reach with this precursor. More recently,21 Choi et al. proposed an-
other kind of organometallic compounds ͓of the general formula Rm1
M͑PR23͒x, with R1 = H, D, H2, D2, alkyl; R2 = alkyl, aryl; and
M = VIIB and VIIIB group metal͔ to obtain high-purity metallic
films or powders.
A promising class of organometallic precursors for deposition of
transition metals is the metallocenes; among them, ferrocene
͑FeCp2͒ was previously used.22,23 FeCp2 is easy to synthesize and
purify, stable in air, and nontoxic. It has a relatively low vapor
pressure ͑ca. 1.3 Pa at 303 K͒, and the good thermal stability of this
compound allows heating at sufficiently high temperatures to sig-
nificantly increase its vapor pressure.24 Such thermal stability im-
poses relatively high pyrolysis temperatures ͑up to 773 K͒ at which
an autocatalytic decomposition reaction occurs in the gas phase and
leads to the formation of a black powder, which primarily consists of
iron contaminated by graphitic carbon and traces of Fe3C ͑cement-
ite͒. According to the literature, reasonably pure Fe films have been
deposited by low-pressure CVD to limit gas-phase nucleation, but it
is very difficult to obtain such films under atmospheric pressure
using inert carrier gas. Elihn et al. employed oxygen to decrease the
carbon contamination under atmospheric pressure with a gas mix-
families of precursors: ͑i͒ Fe͑CO͒ and its derivatives and ͑ii͒
5
Fe͑CP͒ and related compounds. As Fe͑CO͒ vapor pressure is too
2
2
high to easily control the low mole fractions required for micro-
electronic applications, Long11 chose Fe͑CO͒ ͑C4H6͒ and
3
Fe͑CO͒ ͑C8H8͒, for Fe doping of InP layers, between 923 and
3
973 K. He found that the butadiene derivative gave more promising
results than Fe͑CP͒2, and attributed this to its low decomposition
temperature ͓Յ523 K,12 to be compared to Ն723 K 13 for Fe͑Cp͒ ͔.
2
Owing
to
the
high
vapor
pressure
of
Fe͑CO͒5,
McCormick14,15suggested the use of the derivatives Fe͑CO͒4L,
*
Electrochemical Society Active Member.
z E-mail: Francois.Senocq@ensiacet.fr
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