Physica Status Solidi (A) Applied Research p. 389 - 394 (1996)
Update date:2022-08-24
Topics:
Keckes
Ortner
Cerven
Jakabovic
Kovac
Srnanek
Novotny
Tvarozek
ZnO/InP(110) samples prepared as light emission sources are explored by X-ray diffraction to characterize structural changes induced by annealing in the range of 450 to 700°C for 3 min. Metallic indium is created between the ZnO thin film and the InP substrate as a result of annealing. Pole figure measurements reveal that the most densely populated planes In{101} and InP{111} are oriented parallel and a common symmetry plane exists being perpendicular to the above-mentioned planes and simultaneously parallel to an InP{110} and an In{100} plane. Moreover, the two types of InP{111} interface (In or P) are not found equally good for In growth.
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