PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS - 1. UNDOPED FILMS DEPOSITED FROM 525 D. TO 725 D. C.

Article abstract of DOI:10.1149/1.2123504

UNDOPED SILICON FILMS DEPOSITED BY PLASMA-ENHANCED CVD FROMDICHLOROSILANE OVER THE TEMPERATURE RANGE 525 D. -725 D. C HAVE BEEN STUDIED, AND THEIR PROPERTIES HAVE BEEN COMPARED WITH THOSE OF LPCVD SILICON FILMS DEPOSITED FROM SILANE. SIGNIFICANT COMPRESSIVE STRESSES OF 6 * 10**9 DYNES/CM**2 ARE SEEN IN PECVD FILMS. X-RAY, TEM, AND REFLECTANCE MEASUREMENTS SHOW THAT THE FILMS DEPOSITED AT 600 D. C AND BELOW ARE AMORPHOUS, WHILE THOSE DEPOSITED AT 625 D. C ARE POLYCRYSTALLINEWITH A POORLY DEFINED STRUCTURE. A BETTER DEVELOPED POLYCRYSTALLINE STRUCTURE IS OBTAINED AT HIGHER DEPOSITION TEMPERATURES, ALTHOUGH THE DOMINANT ( 110 ) TEXTURE DOES NOT DEVELOPAS READILY AS IN LPCVD FILMS. A POLYCRYSTALLINE STRUCTURE BEGINS TO FORM AT TEMPERATURES ABOUT 25 D. -35 D. C HIGHER INTHE PECVD FILMS THAN IN LPCVD FILMS. AFTER ANNEALING AT 1000 D. C, ALL PECVD FILMS ARE POLYCRYSTALLINE.

Full text of DOI:10.1149/1.2123504

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Downloaded on 2015-05-02 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-02 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-02 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-02 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-02 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).