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Tin powder, a form of the chemical element tin (Sn), is produced by grinding the metal into fine particles. As a silvery-white metal, it is primarily used in various industrial applications due to its unique properties.

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  • 7440-31-5 Structure
  • Basic information

    1. Product Name: Tin
    2. Synonyms: Tin Powder;C.I.77860;C.I. Pigment Metal 5;G-Sn;Metallic tin;PO 1;PO 2;SNE 06PB;SilverMatt Powder;Sn-HWQ;Sn-S 200;Sn-S-HWQ;TEGO 30;TEGO 60;Tin Flake;Tin Paste62-1177;Tin element;W-Sn;Wang;Tin granular;AT-SN;
    3. CAS NO:7440-31-5
    4. Molecular Formula: Sn
    5. Molecular Weight: 118.71
    6. EINECS: 231-141-8
    7. Product Categories: N/A
    8. Mol File: 7440-31-5.mol
  • Chemical Properties

    1. Melting Point: 231.9-233℃
    2. Boiling Point: 2270 °C(lit.)
    3. Flash Point: 2270°C
    4. Appearance: silver-white to grey powder or lump
    5. Density: 7.3 g/cm3
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. Water Solubility: H2O: soluble
    10. CAS DataBase Reference: Tin(CAS DataBase Reference)
    11. NIST Chemistry Reference: Tin(7440-31-5)
    12. EPA Substance Registry System: Tin(7440-31-5)
  • Safety Data

    1. Hazard Codes:  Xi:刺激性物质‖F;
    2. Statements: R37/38:对呼吸道和皮肤有刺激作用‖R36/37/38;
    3. Safety Statements: S24/25:Avoid contact with skin and eyes.;
    4. WGK Germany:
    5. RTECS:
    6. HazardClass: N/A
    7. PackingGroup: N/A
    8. Hazardous Substances Data: 7440-31-5(Hazardous Substances Data)

7440-31-5 Usage

Uses

Used in Metalworking and Metallurgy:
Tin powder is used as a raw material for alloy production, contributing to the creation of bearing alloys, bronze, and pewter. Its fine particle size facilitates better mixing and improved properties in the final alloy.
Used in Electronics Production:
In the electronics industry, tin powder is utilized in the manufacturing of certain types of electronic components, taking advantage of its electrical conductivity and malleability.
Used in Catalysts for Chemical Reactions:
Tin powder serves as a catalyst in various chemical processes, enhancing the rate of reactions and improving overall efficiency.
Used in Pigment and Dye Creation:
The fine particles of tin powder are employed in the production of pigments and dyes, where their reflective properties contribute to color intensity and opacity.
Used in Environmental Considerations:
While tin powder itself is not toxic as an inorganic compound, its environmental impact is a concern. Precautionary measures are necessary during handling and storage to prevent inhalation, which can cause respiratory irritation and minor health hazards. Additionally, environmental exposure to tin can lead to bioaccumulation, posing threats to aquatic organisms.

Check Digit Verification of cas no

The CAS Registry Mumber 7440-31-5 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,4 and 0 respectively; the second part has 2 digits, 3 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 7440-31:
(6*7)+(5*4)+(4*4)+(3*0)+(2*3)+(1*1)=85
85 % 10 = 5
So 7440-31-5 is a valid CAS Registry Number.
InChI:InChI=1/Sn

7440-31-5 Well-known Company Product Price

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  • Alfa Aesar

  • (41169)  Tin slug, 11mm (0.43in) dia x 2mm (0.1in) thick, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 10pc

  • 1174.0CNY

  • Detail
  • Alfa Aesar

  • (41169)  Tin slug, 11mm (0.43in) dia x 2mm (0.1in) thick, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 50pc

  • 5587.0CNY

  • Detail
  • Alfa Aesar

  • (14134)  Tin slug, 11mm (0.43in) dia x 4mm (0.2in) thick, Puratronic?, 99.999% (metals basis)   

  • 7440-31-5

  • 10pc

  • 1749.0CNY

  • Detail
  • Alfa Aesar

  • (14134)  Tin slug, 11mm (0.43in) dia x 4mm (0.2in) thick, Puratronic?, 99.999% (metals basis)   

  • 7440-31-5

  • 50pc

  • 6431.0CNY

  • Detail
  • Alfa Aesar

  • (43416)  Tin slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 25g

  • 718.0CNY

  • Detail
  • Alfa Aesar

  • (43416)  Tin slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 100g

  • 2207.0CNY

  • Detail
  • Alfa Aesar

  • (40898)  Tin sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.995% (metals basis)   

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  • 1each

  • 2519.0CNY

  • Detail
  • Alfa Aesar

  • (40899)  Tin sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)   

  • 7440-31-5

  • 1each

  • 2920.0CNY

  • Detail
  • Alfa Aesar

  • (40900)  Tin sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.995% (metals basis)   

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  • 3332.0CNY

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  • Alfa Aesar

  • (40901)  Tin sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)   

  • 7440-31-5

  • 1each

  • 2511.0CNY

  • Detail
  • Alfa Aesar

  • (10789)  Tin foil, 0.025mm (0.001in) thick, hard, 99.9% (metals basis)   

  • 7440-31-5

  • 15x15cm

  • 222.0CNY

  • Detail
  • Alfa Aesar

  • (10789)  Tin foil, 0.025mm (0.001in) thick, hard, 99.9% (metals basis)   

  • 7440-31-5

  • 15x75cm

  • 442.0CNY

  • Detail

7440-31-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name tin atom

1.2 Other means of identification

Product number -
Other names wang

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-31-5 SDS

7440-31-5Synthetic route

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4
157201-33-7

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4

Conditions
ConditionsYield
In diethyl ether; benzene-d6 7 d at 20°C;A n/a
B 100%
tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
With aluminium In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With Al In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With carbon monoxide In neat (no solvent) intermediate formation of solid SnO at reduction with CO at 600-850°C;;
calcium metastannate

calcium metastannate

Conditions
ConditionsYield
With iron In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With Fe In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With hydrogenchloride; aluminium In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
With HCl; Al In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
stannous fluoride

stannous fluoride

Conditions
ConditionsYield
With chromium In melt byproducts: CrF2;95%
In hydrogen fluoride Electrolysis; Pt cathode, Sn anode; 29-30°C, 1 A/dm**2 with different additives;
With lithium fluoride In neat (no solvent) byproducts: Li3VF6; formation of Sn and Li3VF6 in a mixture with LiF with metallic V;;
sodium stannate(II)

sodium stannate(II)

tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
at 40℃; for 16h; Temperature;95%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

dibutyltin
1191-48-6

dibutyltin

E

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/2, sealed ampoule, 20°C, 24 h;A n/a
B 94%
C n/a
D n/a
E 84%
3,4-dimercaptotoluene
496-74-2

3,4-dimercaptotoluene

tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

A

tin
7440-31-5

tin

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at room temp.; filtered, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 94%
1,2-dimethoxyethane
110-71-4

1,2-dimethoxyethane

ytterbium

ytterbium

diphenyltin(IV) dichloride
1135-99-5

diphenyltin(IV) dichloride

A

tin
7440-31-5

tin

B

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

C

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Conditions
ConditionsYield
In tetrahydrofuran absence of air; stirring (room temp., 12 h), evapn. (vac.), dissoln. in DME, then 10 h (room temp.); crystn. (-10°C, 24 h); elem. anal.;A 81.94%
B 92.54%
C 75.39%
phenyltin trichloride
1124-19-2

phenyltin trichloride

ytterbium

ytterbium

A

tin
7440-31-5

tin

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

C

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

Conditions
ConditionsYield
With THF In tetrahydrofuran absence of air; stirring (room temp., 30 h); filtration off of YbCl2(THF)2 and Sn, evapn. (vac.), washing (hexane), recrystn. (THF);A 52.75%
B 65.59%
C 89.53%
bis(pentamethylcyclopentadienyl)Sn
68757-81-3

bis(pentamethylcyclopentadienyl)Sn

Conditions
ConditionsYield
With potassium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up K was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 45 min; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;89%
With sodium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Na was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 25 h; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;81%
With lithium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Li was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 7 d; 63% of initial material remained unchanged; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;<1
sodium tetraphenyl borate
143-66-8

sodium tetraphenyl borate

tin(ll) chloride

tin(ll) chloride

Conditions
ConditionsYield
In 1,2-dimethoxyethane Irradiation (UV/VIS); under Ar; mole ratio NaBPh4 : SnCl2 = 2 : 1; irradn. (254 nm) for 8 h gave deposition of Sn; deposit sepd., washed with acetone and water, and dried in vac. to give pure Sn;80%
stannous fluoride

stannous fluoride

silicon
7440-21-3

silicon

A

tin
7440-31-5

tin

B

silicon tetrafluoride
7783-61-1

silicon tetrafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Si with SnF2 (molar ratio SnF2:Si=2.00) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 76.8%
B n/a
trimethyltin(IV)chloride
1066-45-1

trimethyltin(IV)chloride

A

tin
7440-31-5

tin

B

hexamethyldistannane
661-69-8

hexamethyldistannane

C

trimethylstannane
1631-73-8

trimethylstannane

Conditions
ConditionsYield
With NdI2; THF In tetrahydrofuran Me3SnCl in THF added under stirring at -60°C to NdI2 in THF; warmed to room temp.; stirred for 30 min; filtered off; dried; dissolved in water again; analyzed by GLC;A 74%
B 11%
C 7%
tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

1,2-benzenedithiole
17534-15-5

1,2-benzenedithiole

A

tin
7440-31-5

tin

B

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at -78°C; filtered, evapd. (vac.), dissolved in MeCN, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 72%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/1, sealed ampoule, 20°C, 24 h; ppt. of V-complex washing (toluene), drying; elem. anal.; solvent removal, fractioning;A n/a
B 67%
C 28%
D 37%
stannous fluoride

stannous fluoride

zirconium
7440-67-7

zirconium

A

tin
7440-31-5

tin

B

zirconium(IV) fluoride
851363-60-5, 7783-64-4

zirconium(IV) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Zr with SnF2 (molar ratio SnF2:Zr=2.10) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 66.5%
B n/a
tetraethyltin
597-64-8

tetraethyltin

A

tin
7440-31-5

tin

B

ethane
74-84-0

ethane

C

ethene
74-85-1

ethene

D

n-butane
106-97-8

n-butane

Conditions
ConditionsYield
byproducts: H2; 400°C for 4 h in closed tube;A n/a
B 57%
C 4%
D 21.5%
other Radiation; X-ray;
Irradiation (UV/VIS); 80°C;
tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
With sodium stannate(II) at 20℃; for 120h;54%
With sodium hydroxide In sodium hydroxide Electrochem. Process; Sn electrodeposition from soln. of SnO in 4 M NaOH on Sn working electrode; Pt counter electrode, Ag/AgCl/satd. KCl reference eelctrode;
With silicon In neat (no solvent) Electric Arc; redn. of SnO by Si;;
tri-n-butyl-tin hydride
688-73-3

tri-n-butyl-tin hydride

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en
86840-61-1

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en

A

tin
7440-31-5

tin

B

bis(tri-n-butyltin)
813-19-4

bis(tri-n-butyltin)

C

tetra-n-butyltin(IV)
1461-25-2

tetra-n-butyltin(IV)

D

(tri(n-butyl)stannyl)dimethylsilane
27490-31-9

(tri(n-butyl)stannyl)dimethylsilane

Conditions
ConditionsYield
In neat (no solvent) (Ar); 2.5 h at 200°C; dissolved (C6D6); Sn septd.; not isolated; detected by NMR; gas chromatography;A 14%
B 10%
C <1
D 45%
carbon oxide sulfide
463-58-1

carbon oxide sulfide

bis(bis(trimethylsilyl)amido)tin(II)
55147-78-9

bis(bis(trimethylsilyl)amido)tin(II)

A

tin
7440-31-5

tin

B

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)
1257217-06-3

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)

Conditions
ConditionsYield
In hexane byproducts: ((CH3)3Si)2NH, (CH3)3SiOSi(CH3)3, (CH3)3SiNCS; (Ar); soln. of tin complex in hexane was placed in bomb at -100°C, OCS was added, stirred and warmed to 25°C, stirred overnight; cooled to -78°C excess OCS was removed in vac., filtered, washed with pentane, crystal were obtained from filtrate, elem. anal.;A n/a
B 39%
stannous fluoride

stannous fluoride

vanadium
7440-62-2

vanadium

A

tin
7440-31-5

tin

B

vanadium(III) fluoride
10049-12-4

vanadium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of V with SnF2 (molar ratio SnF2:V=2.68) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 21.6%
B n/a
stannous fluoride

stannous fluoride

niobium

niobium

A

tin
7440-31-5

tin

B

niobium pentafluoride
7783-68-8

niobium pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Nb with SnF2 (molar ratio SnF2:Nb=6.42) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 19.8%
B n/a
stannous fluoride

stannous fluoride

titanium
7440-32-6

titanium

A

tin
7440-31-5

tin

B

titanium(IV) fluoride
7783-63-3

titanium(IV) fluoride

Conditions
ConditionsYield
In melt Kinetics; placing of mixt. of Ti with SnF2 (molar ratio SnF2:Ti=4.04) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 13.8%
B n/a
tantalum

tantalum

stannous fluoride

stannous fluoride

A

tin
7440-31-5

tin

B

tantalum pentafluoride
7783-71-3

tantalum pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Ta with SnF2 (molar ratio SnF2:Ta=1.46) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 9.2%
B n/a
chromium(0) hexacarbonyl
199620-14-9, 13007-92-6

chromium(0) hexacarbonyl

[2.2.2]cryptande
23978-09-8

[2.2.2]cryptande

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

C

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

Conditions
ConditionsYield
With KC8 In tetrahydrofuran add. of Cr(CO)6 to a suspension of KC8 under Ar at -70°C, stirring (-70°C, 1 h; 0°C, 2 h), addn. of anhydr. SnCl2 at -70°C, addn. of cryptand after 0.5 h stirring, warming to 0°C; filtn. through Kieselgur, concg. in high-vac., layering (15°C, Et2O, pentane), after 7 days Sn seperates;A n/a
B n/a
C 7%
stannous fluoride

stannous fluoride

chromium
7440-47-3

chromium

A

tin
7440-31-5

tin

B

chromium(III) fluoride
7788-97-8

chromium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Cr with SnF2 (molar ratio SnF2:Cr=2.05) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.75 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 6.8%
B n/a
cassiterite

cassiterite

Conditions
ConditionsYield
In melt in presence of WO3;1.5%
In melt in presence of WO3;1.5%
With anthracite 850-900°C;
stannous fluoride

stannous fluoride

aluminium
7429-90-5

aluminium

A

tin
7440-31-5

tin

B

aluminum(III) fluoride
7784-18-1

aluminum(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Al with SnF2 (molar ratio SnF2:Al=1.65) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 1.5%
B n/a
oxygen
80937-33-3

oxygen

tin(II) oxide

tin(II) oxide

A

tin
7440-31-5

tin

B

tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
SnO was oxidized at 612-1030 K;A 1%
B n/a
methyl bromide
74-83-9

methyl bromide

tetramethylstannane
594-27-4

tetramethylstannane

Conditions
ConditionsYield
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
In water; acetonitrile Electrolysis; Sn-cathode, Pt-anode, 0.25 M Et4NClO4 in MeCN/water=7:1, 25°C, 10mA/cm**(-2); gas chromy.;
nickel
7440-02-0

nickel

sulfur
7704-34-9

sulfur

1,2-diaminopropan
78-90-0, 10424-38-1

1,2-diaminopropan

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

Conditions
ConditionsYield
In further solvent(s) High Pressure; prepd. under solvothermal conditions; reactants weighted in ratio of 1 Ni:1 Sn:3 S, heated in sealed Teflon-lined steel autoclave in pure 1,2-diaminopropane for 7 d at 140°C; elem. anal.;100%
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

phosphorus

phosphorus

P4Se12Sn(4-)*4Cs(1+)

P4Se12Sn(4-)*4Cs(1+)

Conditions
ConditionsYield
at 250 - 650℃; for 20h; Sealed tube;100%
germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4Sb0.13Te

Ge0.4Sn0.4Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0286Sn0286In0143Sb0143Te

Ge0286Sn0286In0143Sb0143Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.72Sn0.08In0067Sb0067Te

Ge0.72Sn0.08In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.24Sn0.56In0067Sb0067Te

Ge0.24Sn0.56In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.08Sn0.72In0067Sb0067Te

Ge0.08Sn0.72In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4In0067Sb0067Te

Ge0.4Sn0.4In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.35Sn0.35In0.1Sb0.1Te

Ge0.35Sn0.35In0.1Sb0.1Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.5Sn0.5InSbTe4

Ge0.5Sn0.5InSbTe4

Conditions
ConditionsYield
at 550 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

GeSnInSbTe5

GeSnInSbTe5

Conditions
ConditionsYield
at 350 - 950℃; for 240h; Inert atmosphere;100%
antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8Sb0.13Te

Sn0.8Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8In0067Sb0067Te

Sn0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

tellurium

tellurium

Ge0.4Sn0.4In0.13Te

Ge0.4Sn0.4In0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
bismuth
7440-69-9

bismuth

lithium sulfide

lithium sulfide

sulfur
7704-34-9

sulfur

Li0.97Sn2.06Bi4.97S10

Li0.97Sn2.06Bi4.97S10

Conditions
ConditionsYield
Stage #1: bismuth; tin; lithium sulfide; sulfur at 800℃; under 0.00150015 Torr; for 10h; Inert atmosphere; Glovebox; Sealed tube;
Stage #2: at 800℃; for 26h;
100%
1-methyl-3-octylimidazolium tribromide
1337952-48-3

1-methyl-3-octylimidazolium tribromide

1-methyl-3-octylimidazolium tribromidostannate(II)

1-methyl-3-octylimidazolium tribromidostannate(II)

Conditions
ConditionsYield
at 125℃; for 72h; Schlenk technique;100%
n-Butyl chloride
109-69-3

n-Butyl chloride

A

dibutyltin chloride
683-18-1

dibutyltin chloride

B

tributyltin chloride
1461-22-9

tributyltin chloride

Conditions
ConditionsYield
With catalyst: dicyclohexyl-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 99%
B 1%
With catalyst: dibenzo-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
With catalyst: dibenzo-18-crown-6/n-C8H17I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
iodine
7553-56-2

iodine

tin(II) iodide

tin(II) iodide

Conditions
ConditionsYield
With hydrogenchloride In water at 170℃; Inert atmosphere;99%
1260°C;
I2 in H2 stream;
trifluorormethanesulfonic acid
1493-13-6

trifluorormethanesulfonic acid

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflate - dimethylsulfoxide (1/6.1)

tin(IV) triflate - dimethylsulfoxide (1/6.1)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflic acid (4 equiv.) in3 portions, heated at 100°C for 24 h;99%
bis(trifluoromethanesulfonyl)amide
82113-65-3

bis(trifluoromethanesulfonyl)amide

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflimidic acid (4 equiv.) in 3 portions, heated at 100°C for 7 h;99%
selenium
7782-49-2

selenium

barium
7440-39-3

barium

Ba2SnSe5

Ba2SnSe5

Conditions
ConditionsYield
In neat (no solvent) mixt. of Ba, Sn, Se in stoich. ratio 2:1:5 was placed into fused silica tube; sealed under vac.; put into furnace; heated to 750°C within3 ds; kept at 750°C for 4 ds; cooled to 700°C within 10 m in; annealed at 650°C for 4 ds; cooled to room temp. within 4 ds;99%
Stage #1: selenium; tin; barium at 750℃; for 150h; Sealed tube;
Stage #2: at 650℃; for 100h;
samarium
7440-19-9

samarium

nickel
7440-02-0

nickel

Sm2NiSn4

Sm2NiSn4

Conditions
ConditionsYield
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Ta tube, heated at 970°C for 36 h, quenched in water, annealed at 700°C for 15 d;99%
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Nb tube, heated under dynamic vac. at 300°C for 1 d, heated at 950°C for 5 d, cooled to room temp.at 15°C/h;
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraethylammonium bromide
71-91-0

tetraethylammonium bromide

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Et4NBr in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraphenyl phosphonium chloride
2001-45-8

tetraphenyl phosphonium chloride

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Ph4PCl in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
2-methoxy-ethanol
109-86-4

2-methoxy-ethanol

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Conditions
ConditionsYield
With lithium chloride In further solvent(s) Electrolysis; (N2 or Ar); using of Sn as anode and stainless steel plate as cathode; electrolysis for 1-1.5 h with soln. of electrolyte LiCl in MeOCH2CH2OH; removal of methyl cellosolve in vac., sepn. from LiCl by extn. with toluene; distn. in vac.; elem. anal.;99%
Electrochem. Process; Dissolution of Sn anode at 110-220 V and 0.2-0.5 A.; Elem. anal.;
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

arsenic trisulfide

arsenic trisulfide

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

Conditions
ConditionsYield
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 500°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;99%
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 550°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;
Conditions
ConditionsYield
at 399.84 - 699.84℃; for 408h; Sealed tube;98%
In melt sealed in evacuated quartz ampoule; placed in vertical furnace; heated to 1150°C at 40°C/h; kept for 24 h, cooled at 10°C/hto 800°C, at 1°C/h to 640°C, to 500°C at 5. degree.C/h, annealed for 120 h;
In neat (no solvent) vac; 1350 K;
iodine
7553-56-2

iodine

2-Aminophenyl disulfide
1141-88-4

2-Aminophenyl disulfide

Sn(SC6H4NH2-o)3I
369361-53-5

Sn(SC6H4NH2-o)3I

Conditions
ConditionsYield
In toluene 1.5 equiv. of disulfide, 0.5 equiv. of I2 and Sn metal were refluxed in toluene for 4 h; mixt. was filtered through Celite, soln. was concd. in vac., cooled in ice-bath, solid was filtered off, washed with petroleum ether (60-80 °C), dried in vac., elem. anal.;98%

7440-31-5Relevant articles and documents

Reduction of tin oxide by hydrogen radicals

Wallinga,Arnoldbik,Vredenberg,Schropp,Van Der Weg

, p. 6219 - 6224 (1998)

The effect of a reducing hydrogen ambient on textured tin oxide thin films on glass substrates has been investigated. Hydrogen treatments were done at 230 and 430 °C by hot wire (HW) and rf plasma-decomposed hydrogen with pure H2 as source gas. By these treatments the possible reduction of the substrate during the deposition of a-Si:H for solar cells is simulated. Ion beam techniques revealed that the exposure to HW-decomposed H-radicals leads to the formation of a tin-rich surface layer of 40 nm in 1 min at both 230 and at 430 °C. The loss of oxygen is higher for the high-temperature treatment. The optical transmission at a wavelength of 800 nm is reduced from 80% to less than 20%, while the sheet resistance increases from 6 to 8 Ω/□. At both temperatures the reduction of fluorine-doped tin oxide (FTO) by a HW-treatment occurs faster than by rf plasma-decomposed H. The H radical concentration, which is higher for the HW-decomposed hydrogen as compared to rf plasma-decomposed hydrogen, is the most important factor in determining the rate of the reduction process. For short exposures to H radicals, the transparency and conductivity of the tin oxide may be completely restored by means of reoxidation in air at 400 °C. In contrast, prolonged exposure to H-radicals induces irreversible loss of transparency and conductivity, concomitant with formation of granule-like particles of metallic tin on the surface. A thin plasma-deposited a-Si:H-layer was found to effectively protect the FTO-layer against reduction due to HW-generated H-radicals.

Bimodal microstructure and reaction mechanism of Ti2SnC synthesized by a high-temperature reaction using Ti/Sn/C and Ti/Sn/TiC powder compacts

Li, Shi-Bo,Bei, Guo-Ping,Zhai, Hong-Xiang,Zhou, Yang

, p. 3617 - 3623 (2006)

High purity of titanium tin carbide (Ti2SnC) powder was fabricated by pressureless sintering two types of mixtures of Ti/Sn/C and Ti/Sn/TiC powders under different conditions. A bimodal microstructure of Ti2SnC with plate-like and rod-like forms was first observed, which is determined by the grain growth rate in different planes, the C particle's size, and the growth environment. Based on the microstructure observation, a reaction model was proposed to understand the reaction mechanism for the formation of Ti2SnC. Further investigation of the thermal stability of Ti2SnC demonstrates that Ti2SnC decomposes to TiC and Sn in vacuum atmosphere at 1250 C.

SrSn4: A Superconducting Stannide with Localized and Delocalized Bond Character

Hoffmann, Stefan,Faessler, Thomas F.

, p. 8748 - 8754 (2003)

The title compound is the tin-richest phase in the system Sr-Sn and is obtained by stoichiometric combination of the elements, SrSn4 peritecticly decomposes under formation of SrSn3 and Sn at 340 °C. The structure determined from a single crystal shows a new structure type with a novel structure motive in tin chemistry. It can be described by a corrugated, distorted quadratic net of tin atoms as the only building unit. The nets intersect at common Sn atoms, and the resulting channels host the Sr atoms, The structure can alternatively be described as an intergrowth structure of the AlB2-type and W-type. The atoms that are connected by the two shortest Sn-Sn distances (2,900 and 3.044 A) form a two-dimensional net consisting of hexagons of tin atoms. The hexagons have boat conformation in contrast to the rather similar α-As structure type, where hexagons have a chair conformation. Further tin atoms connect the two-dimensional net of Sn hexagons. Temperature-dependent magnetic susceptibility measurements show that SrSn4 is superconducting with Tc = 4.8 K at 10 G. LMTO band structure and density of states calculations verify the metallic behavior of SrSn4. An analysis of the electronic structure with the help of the electron localization function (ELF) shows that localized covalent bonds beside delocalized bonds coexist in SrSn4.

Electrochemical nitriding of Sn in LiCl-KCl-Li3N systems

Goto, Takuya,Ito, Yasuhiko

, p. 418 - 421 (2005)

Electrochemical nitriding of a liquid phase tin metal has experimentally been confirmed by using the oxidation of nitride ions in molten LiCl-KCl-Li 3N melts according to the following reactions:N3-=Nads+3e-Nads+Sn= SnNx From the XPS analysis, N 1s signal and Sn 3d signals are observed, which corresponds to the formation of SnNx, after conducting argon ion sputtering for 1000 s. This showed that a thick and stable nitride film was formed by electrochemical nitriding.

Preparation and characterization of three-dimensional tin thin-film anode with good cycle performance

Du, Zhijia,Zhang, Shichao,Jiang, Tao,Bai, Zhiming

, p. 3537 - 3541 (2010)

Three-dimensional tin thin-film anode was prepared by electroless plating tin onto three-dimensional (3D) copper foam (which served as current collector), and characterized physically by SEM, EDS and XRD. Its electrochemical property and mechanism were studied by charge-discharge test, cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The SEM and EDS results indicated that tin film with 500 nm thickness was formed over the whole surface of copper branches. The XRD results suggested that a new phase of Cu6Sn5 was formed between copper and tin. Besides the tin microflake structure of 500 nm thickness, the interaction effects of the copper foam and Cu6Sn5 phase formed between copper and tin resulted in good cycle performance with first discharge capacity of 737 mAh g-1, 97% capacity retention after 20 cycles and still 84% after 40 cycles.

Thermolysis specifics of Tin(IV) and Tin(II) complex derivatives: Thermolysis of (Acac)2SnX2 (X = Cl, N3), (CO)5MSnCl2(thf) (M = Cr, Mo, W), (CO) 5MSn(Acac)2, (CO)5MSn

Dobrokhotova,Koroteev,Novotortsev,Egorov,Nefedov

, p. 1109 - 1119 (2007)

Differential scanning calorimetry and thermogravimetry are used to study the thermolysis of following complexes: (Acac)2Sn(N3)Cl (1); (Acac)2SnCl2 (2); (CO)5MSn(Acac) 2 with M = Cr (3) or W

Development of lead free pulse electrodeposited tin based composite solder coating reinforced with ex situ cerium oxide nanoparticles

Sharma, Ashutosh,Bhattacharya, Sumit,Das, Siddhartha,Fecht,Das, Karabi

, p. 609 - 616 (2013)

Pure Sn and Sn-CeO2 nanocomposite films have been pulse electrodeposited from an aqueous electrolyte containing stannous chloride (SnCl2-2H2O) and triammonium citrate (C6H 17N3O7). The codeposition is achieved by adding different amounts of ball milled CeO2 nanopowders (1-30 g/L) with a mean particle size of ~30 nm to the electrolyte. Microstructural characterizations have been carried out by X-ray diffraction analysis, scanning electron microscopy coupled with an energy dispersive spectroscopy, and transmission electron microscopy. The microstructural observations show that a uniform microstructure is obtained at a concentration of ~6 wt% CeO 2 in the deposits corresponding to 15 g/L CeO2 in electrolyte. Thus, incorporation of an optimum amount of CeO2 in a composite provides better mechanical, and wear and friction properties, without sacrificing the electrical resistivity significantly.

ELECTRODEPOSITION OF TIN ONTO A WELL-DEFINED Pt(111) SURFACE FROM AQUEOUS HBr SOLUTIONS: STUDIES BY LEED AND AUGER ELECTRON SPECTROSCOPY.

Stickney,Schardt,Stern,Wieckowski,Hubbard

, p. 648 - 650 (1986)

The authors report on instance in which the energetic driving force for electrosorption, in this case the substantial affinity of tin-oxygen monolayers for the Pt surface, was sufficient to cause spontaneous deposition of monolayer quantities of material upon immersion (of Pt into Sn(II) solutions) at open circuit. Since the electrodeposition of Sn species occurred without flow of current in the external circuit, the deposited species were detected, identified, and quantitated by Auger electron spectroscopy.

Electrodeposited tin coating as negative electrode material for lithium-ion battery in room temperature molten salt

Fung,Zhu

, p. A319-A324 (2002)

A new room temperature molten salt (RTMS) [1-methyl-3-ethylimidazolium/AlCl3/SnCl2 (3:2:0.5)] was developed for depositing tin on a copper electrode. Different tin crystallites were deposited at different temperatures, giving widely different performances of the assembled lithium cell [Sn (Cu)/LiCl buffered MEICl-AlCl3 RTMS/lithium]. Tin film deposited at 50°C or higher gave a more desirable crystal structure and an improved performance than films obtained at lower temperatures. Both cyclic voltammetry and galvanostatic cycling show the formation of three major lithium-tin alloy phases corresponding to the phase transition of LiSn/Li7Sn3, Li13Sn5/Li7Sn2, and Li7Sn2/Li22Sn5. Increases in the charging and discharging capacities were found with the deposition of higher lithium-rich tin alloys, though at the degradation of the irreversible capacity at the first cycle. The discharging capacity decreased rapidly, producing loose, expanded, and irregular crystallites upon cycling at a high current density (cd) (1.0 mA/cm2). However, an average capacity of 140 mAh/g, coulombic efficiency around 85%, and more than 200 cycles were obtained at a low cd (0.4 mA/cm2). The improvement is attributed to the deposition of small and regular tin crystallites that allows reversible insertion and removal of lithium from a more stable crystal structure without a significant volume change during cycling.

Amorphous Sn/Crystalline SnS2 Nanosheets via In Situ Electrochemical Reduction Methodology for Highly Efficient Ambient N2 Fixation

Li, Pengxiang,Fu, Wenzhi,Zhuang, Peiyuan,Cao, Yudong,Tang, Can,Watson, Angelica Blake,Dong, Pei,Shen, Jianfeng,Ye, Mingxin

, (2019)

Electrochemical nitrogen reduction reaction (NRR) as a new strategy for synthesizing ammonia has attracted ever-growing attention, due to its renewability, flexibility, and sustainability. However, the lack of efficient electrocatalysts has hampered the development of such reactions. Herein, a series of amorphous Sn/crystalline SnS2 (Sn/SnS2) nanosheets by an L-cysteine-based hydrothermal process, followed by in situ electrochemical reduction, are synthesized. The amount of reduced amorphous Sn can be adjusted by selecting electrolytes with different pH values. The optimized Sn/SnS2 catalyst can achieve a high ammonia yield of 23.8 μg h?1 mg?1, outperforming most reported noble-metal NRR electrocatalysts. According to the electrochemical tests, the conversion of SnS2 to an amorphous Sn phase leads to the substantial increase of its catalytic activity, while the amorphous Sn is identified as the active phase. These results provide a guideline for a rational design of low-cost and highly active Sn-based catalysts thus paving a wider path for NRR.

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