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76-16-4

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76-16-4 Usage

General Description

Hexafluoroethane, also known as R-116, is a colorless and odorless gas with the chemical formula C2F6. It is a non-flammable and non-toxic substance, making it a widely used refrigerant in various applications such as air conditioning and refrigeration systems. Hexafluoroethane has a high global warming potential and is classified as a greenhouse gas, contributing to the depletion of the ozone layer. Due to its potential for environmental harm, its use has been regulated under the Montreal Protocol, and efforts have been made to develop and implement alternative refrigerants with lower environmental impact. Additionally, hexafluoroethane is used as a propellant in aerosol products and as a cleaning agent in industries.

Check Digit Verification of cas no

The CAS Registry Mumber 76-16-4 includes 5 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 2 digits, 7 and 6 respectively; the second part has 2 digits, 1 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 76-16:
(4*7)+(3*6)+(2*1)+(1*6)=54
54 % 10 = 4
So 76-16-4 is a valid CAS Registry Number.
InChI:InChI=1/C2F6/c3-1(4,5)2(6,7)8

76-16-4Synthetic route

1,1,1,2-tetrafluoroethane
811-97-2

1,1,1,2-tetrafluoroethane

A

1,1,1,2,2-pentafluoroethane
354-33-6

1,1,1,2,2-pentafluoroethane

B

Difluoromethane
75-10-5

Difluoromethane

C

trifluoromethan
75-46-7

trifluoromethan

D

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
With fluorine at 200 - 250℃; Product distribution; Further Variations:; Reagents;A 1.1%
B 0.9%
C 0.4%
D 97.6%
Perfluoromethyl azide
3802-95-7

Perfluoromethyl azide

A

carbon tetrafluoride
75-73-0

carbon tetrafluoride

B

Hexafluoroethane
76-16-4

Hexafluoroethane

C

difluoramino trifluoromethane
335-01-3

difluoramino trifluoromethane

Conditions
ConditionsYield
With fluorine at 70℃; for 48h;A 6%
B 2%
C 92%
polytetrafluoroethylene
116-14-3

polytetrafluoroethylene

Te4(2+)*2AsF6(1-)=Te4(AsF6)2
12536-35-5

Te4(2+)*2AsF6(1-)=Te4(AsF6)2

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

bis(pentafluoroethyl)tellurium
41055-97-4

bis(pentafluoroethyl)tellurium

C

bis(pentafluoroethyl) ditelluride
41055-98-5

bis(pentafluoroethyl) ditelluride

D

pentafluoroethyl(nonafluorobutyl)tellurium
55620-41-2

pentafluoroethyl(nonafluorobutyl)tellurium

E

arsenic(III) fluoride
7784-35-2

arsenic(III) fluoride

Conditions
ConditionsYield
at 100°C for 11 d, at 15 atm in a Monel reactor;A n/a
B 87%
C 12.2%
D 0.5%
E n/a
at 100°C for 11 d, at 15 atm in a Monel reactor;A n/a
B 87%
C 12.2%
D 0.5%
E n/a
at 100°C for 11 d, at 15 atm in a Monel reactor;A n/a
B 87%
C 12.2%
D 0.5%
E n/a
(Rh(CO)(P(C6H5)3)2)2*2C4H8O

(Rh(CO)(P(C6H5)3)2)2*2C4H8O

iodotrifluoromethane
2314-97-8

iodotrifluoromethane

A

rhodium iodo carbonyl (triphenylphosphine)2 complex
21006-49-5, 15094-66-3, 87584-88-1

rhodium iodo carbonyl (triphenylphosphine)2 complex

B

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
In tetrahydrofuran a suspn. of Rh complex in THF and CF3I in 1:2 molar ratio sealed in vacuo in a Pyrex reaction tube was either stirred or shaken for 4 h at 20°C; volatiles were removed under vac., trapped at -196°C and analyzed by GLC, residue was chromd. using hexane followed by benzene or CHCl3 as eluent, and recrystd. from a mixt. of either CHCl3 and EtOH or benzene and MeOH;A 44%
B 79%
In tetrahydrofuran a suspn. of Rh complex in THF and CF3I in 1:1 molar ratio sealed in vacuo in a Pyrex reaction tube was either stirred or shaken for 50 h at 20°C; 43% of the starting solvate was recovered; volatiles were removed under vac., trapped at -196°C and analyzed by GLC, residue was chromd. using hexane followed by benzene or CHCl3 as eluent, and recrystd. from a mixt. of either CHCl3 and EtOH or benzene and MeOH;A 26%
B 46%
1,1,2-Trichloro-1,2,2-trifluoroethane
76-13-1

1,1,2-Trichloro-1,2,2-trifluoroethane

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

Chloropentafluoroethane
76-15-3

Chloropentafluoroethane

C

1,2-dichloro-1,1,2,2-tetrafluoroethane
76-14-2

1,2-dichloro-1,1,2,2-tetrafluoroethane

Conditions
ConditionsYield
With chromium fluoride; magnesium fluoride; hydrogen fluoride at 250 - 500℃; Product distribution;A 3%
B 78%
C 19%
tetrafluorohydrazine
10036-47-2

tetrafluorohydrazine

pentafluoro(1,1,2,2,2-pentafluoroethyl)-λ6-sulfane
354-67-6

pentafluoro(1,1,2,2,2-pentafluoroethyl)-λ6-sulfane

A

carbon tetrafluoride
75-73-0

carbon tetrafluoride

B

Hexafluoroethane
76-16-4

Hexafluoroethane

C

Perfluoroethylamine
354-80-3

Perfluoroethylamine

D

sulfur tetrafluoride
7783-60-0

sulfur tetrafluoride

E

sulphur hexafluoride
2551-62-4

sulphur hexafluoride

Conditions
ConditionsYield
NF3 formed too;A n/a
B n/a
C 70%
D n/a
E n/a
NF3 formed too;A n/a
B n/a
C 70%
D n/a
E n/a
(E)-1,2-difluoroethene
1630-78-0

(E)-1,2-difluoroethene

Hexafluoroacetone
684-16-2

Hexafluoroacetone

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

1,1,1,2,3,4,4,4-octafluorobutane
75995-72-1

1,1,1,2,3,4,4,4-octafluorobutane

cis-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
74960-13-7, 74960-20-6

cis-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan

trans-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
74960-13-7, 74960-20-6

trans-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan

Conditions
ConditionsYield
for 144h; Irradiation;A 7 mg
B 0.3%
C 26%
D 69%
Ethanesulfonamide
1520-70-3

Ethanesulfonamide

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

ethanesulfonyl fluoride
754-03-0

ethanesulfonyl fluoride

C

Trifluoromethanesulfonyl fluoride
335-05-7

Trifluoromethanesulfonyl fluoride

D

pentafluoroethanesulfonyl fluoride
354-87-0

pentafluoroethanesulfonyl fluoride

Conditions
ConditionsYield
With hydrogen fluoride current: 4.5 to 5.5 V; 0.3 to 0.6 Adm-2; Further byproducts given;A 2.1%
B 3.1%
C n/a
D 54.9%
iodotrifluoromethane
2314-97-8

iodotrifluoromethane

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

(13)C-trifluoroiodomethane
74228-31-2

(13)C-trifluoroiodomethane

Conditions
ConditionsYield
With silver for 1h; Product distribution; Irradiation; further metal; addition of NO; investigation of isotopic selectivity;A n/a
B 54%
cis-2,3-difluoro-5,6-bis(trifluoromethyl)-2,3-dihydro-p-dioxin
76293-22-6

cis-2,3-difluoro-5,6-bis(trifluoromethyl)-2,3-dihydro-p-dioxin

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

(Z)-1,2-difluoro-ethene
1630-77-9

(Z)-1,2-difluoro-ethene

C

(E)-1,2-difluoroethene
1630-78-0

(E)-1,2-difluoroethene

D

1,1,1,4,4,4-hexafluoro-2,3-butanedione
685-24-5

1,1,1,4,4,4-hexafluoro-2,3-butanedione

Conditions
ConditionsYield
at 610℃; Product distribution; various reaction conditions;A 31%
B 46%
C 34%
D 18%
perfluoro(N,N-dimethyl trifluorovinylamine)
13821-49-3

perfluoro(N,N-dimethyl trifluorovinylamine)

A

trifluoromethan
75-46-7

trifluoromethan

B

Vinylidene fluoride
75-38-7

Vinylidene fluoride

C

Hexafluoroethane
76-16-4

Hexafluoroethane

D

trifluoromethyl isocyanate
460-49-1

trifluoromethyl isocyanate

E

perfluoro(2-aza-1-hexene)
559-93-3

perfluoro(2-aza-1-hexene)

Conditions
ConditionsYield
With toluene pyrolysis 610°C, contact time 0.66 sec, further product;A n/a
B n/a
C n/a
D n/a
E 46%
With toluene pyrolysis 610°C, contact time 0.66 sec, further product;A n/a
B n/a
C n/a
D n/a
E 46%
iodo-bis-trifluoromethyl-phosphine
359-64-8

iodo-bis-trifluoromethyl-phosphine

A

iodotrifluoromethane
2314-97-8

iodotrifluoromethane

B

Hexafluoroethane
76-16-4

Hexafluoroethane

C

trifluoromethyldiiodophosphine
421-59-0

trifluoromethyldiiodophosphine

D

tris(trifluoromethyl)phosphine
432-04-2

tris(trifluoromethyl)phosphine

E

phosphorous triiodide
13455-01-1

phosphorous triiodide

Conditions
ConditionsYield
205°C (48 h);A 2%
B 8%
C 2%
D 45%
E n/a
propane-1-sulfonamide
24243-71-8

propane-1-sulfonamide

A

freon-218
76-19-7

freon-218

B

Hexafluoroethane
76-16-4

Hexafluoroethane

C

ethanesulfonyl fluoride
754-03-0

ethanesulfonyl fluoride

D

1-perfluoropropanesulfonyl fluoride
423-40-5

1-perfluoropropanesulfonyl fluoride

Conditions
ConditionsYield
With hydrogen fluoride current: 4.5 to 5.5 V; 0.3 to 0.6 Adm-2; Further byproducts given;A 2.8%
B 3.1%
C 4.3%
D 40%
(Z)-1,2-difluoro-ethene
1630-77-9

(Z)-1,2-difluoro-ethene

Hexafluoroacetone
684-16-2

Hexafluoroacetone

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

1,1,1,2,3,4,4,4-octafluorobutane
75995-72-1

1,1,1,2,3,4,4,4-octafluorobutane

cis-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
74960-13-7, 74960-20-6

cis-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan

trans-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan
74960-13-7, 74960-20-6

trans-2,2-bis(trifluoromethyl)-3,4-difluoro-oxetan

Conditions
ConditionsYield
for 144h; Irradiation;A 8 mg
B 6%
C 38%
D 37%
polytetrafluoroethylene
116-14-3

polytetrafluoroethylene

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
With nickel(II) fluoride; fluorine at 100℃;35%
With antimony pentafluoride at 25 - 98℃; under 50 - 760 Torr;
tris(trifluoromethyl)arsine
432-02-0

tris(trifluoromethyl)arsine

methyl iodide
74-88-4

methyl iodide

A

iodotrifluoromethane
2314-97-8

iodotrifluoromethane

B

Hexafluoroethane
76-16-4

Hexafluoroethane

C

methylbistrifluoromethylarsine
431-76-5

methylbistrifluoromethylarsine

Conditions
ConditionsYield
Irradiation (UV/VIS); with UV-light;A 18%
B 15%
C n/a
trifluoromethan
75-46-7

trifluoromethan

A

polytetrafluoroethylene
116-14-3

polytetrafluoroethylene

B

carbon tetrafluoride
75-73-0

carbon tetrafluoride

C

freon-218
76-19-7

freon-218

D

perfluoropropylene
116-15-4

perfluoropropylene

E

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
With activated carbon supported potassium at 799.84℃; under 750.075 Torr; Pyrolysis; Inert atmosphere;A 16.1%
B n/a
C n/a
D 14.4%
E n/a
tris(trifluoromethyl)arsine
432-02-0

tris(trifluoromethyl)arsine

A

trifluoromethan
75-46-7

trifluoromethan

B

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
Irradiation (UV/VIS); photochemical hydrogenation at 50°C, 16 h;A n/a
B 14%
Irradiation (UV/VIS); photochemical hydrogenation at 20°C, 19 h;
1,1,1,2-tetrafluoroethane
811-97-2

1,1,1,2-tetrafluoroethane

A

1,1,1,2,2-pentafluoroethane
354-33-6

1,1,1,2,2-pentafluoroethane

B

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
With cobalt (III) fluoride at 220℃; for 0.000277778h; Product distribution; var. fluorinating agents and temp.;A 12.4%
B 2%
Product distribution;
carbon tetrafluoride
75-73-0

carbon tetrafluoride

A

freon-218
76-19-7

freon-218

B

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
im Kohlelichtbogen;
In neat (no solvent) other Radiation; decomposition of CF4 by (60)Co-γ-rays, formation of C2F6 and C3F8;; determination by ESR;;
carbon tetrafluoride
75-73-0

carbon tetrafluoride

A

polytetrafluoroethylene
116-14-3

polytetrafluoroethylene

B

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
im Kohlelichtbogen;
Zersetzung im elektrischen Lichtbogen;
In neat (no solvent) Electric Arc; formation of C2F4 and C2F6 in electric arc between coal electrodes;;
carbon tetrafluoride
75-73-0

carbon tetrafluoride

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
bei wiederholtem Leiten durch einen Kohlelichtbogen unter vermindertem Druck;
trifluoromethyl radical
2264-21-3

trifluoromethyl radical

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
at 127℃;
at 626.9 - 826.9℃; Kinetics;
In neat (no solvent) Kinetics; reaction is carried out by photolysis of CF3COCF3 in Ar at various conditions;;
iodo-bis-trifluoromethyl-phosphine
359-64-8

iodo-bis-trifluoromethyl-phosphine

A

iodotrifluoromethane
2314-97-8

iodotrifluoromethane

B

Hexafluoroethane
76-16-4

Hexafluoroethane

C

trifluoromethyldiiodophosphine
421-59-0

trifluoromethyldiiodophosphine

D

tris(trifluoromethyl)phosphine
432-04-2

tris(trifluoromethyl)phosphine

Conditions
ConditionsYield
at 205℃;
2H-pentafluoropropene
690-27-7

2H-pentafluoropropene

iodotrifluoromethane
2314-97-8

iodotrifluoromethane

A

1,1,1,3,3-pentafluoro-3-iodo-2-trifluoromethyl-propane
382-25-2

1,1,1,3,3-pentafluoro-3-iodo-2-trifluoromethyl-propane

B

trifluoromethan
75-46-7

trifluoromethan

C

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
UV-Licht.Irradiation;
tetrafluoroacetic acid
359-46-6

tetrafluoroacetic acid

A

carbon tetrafluoride
75-73-0

carbon tetrafluoride

B

Carbonyl fluoride
353-50-4

Carbonyl fluoride

C

Hexafluoroethane
76-16-4

Hexafluoroethane

D

methylammonium carbonate
15719-64-9, 15719-76-3, 97762-63-5

methylammonium carbonate

Conditions
ConditionsYield
at 30 - 80℃; under 1 - 3 Torr; Kinetics; Thermolyse;
pentafluoro-propionyl hypofluorite
426-47-1

pentafluoro-propionyl hypofluorite

A

Hexafluoroethane
76-16-4

Hexafluoroethane

B

methylammonium carbonate
15719-64-9, 15719-76-3, 97762-63-5

methylammonium carbonate

Conditions
ConditionsYield
at -40 - 25℃; Zersetzung unter vermindertem Druck;
ethane
74-84-0

ethane

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
With copper; fluorine
With fluorine at 64℃;
With chlorine trifluoride und Leiten des Reaktionsgemisches ueber Aluminiumfluorid bei 360grad;
carbon tetraiodide
507-25-5

carbon tetraiodide

Hexafluoroethane
76-16-4

Hexafluoroethane

Conditions
ConditionsYield
With iodine pentafluoride anfangs in Kaeltemischung, zuletzt bei 80-90grad;
polytetrafluoroethylene
116-14-3

polytetrafluoroethylene

A

perfluoropropylene
116-15-4

perfluoropropylene

B

Hexafluoroethane
76-16-4

Hexafluoroethane

C

perfluoroisobutylene
382-21-8

perfluoroisobutylene

D

Octafluorocyclobutane
115-25-3

Octafluorocyclobutane

Conditions
ConditionsYield
at 600℃; Dimerisierung.Pyrolysis;
at 650℃; Dimerisierung.Pyrolysis;
Hexafluoroethane
76-16-4

Hexafluoroethane

polytetrafluoroethylene
116-14-3

polytetrafluoroethylene

Conditions
ConditionsYield
With hydrogen at 336.84 - 736.84℃; Product distribution / selectivity; Gas phase; Inert atmosphere;100%
Hexafluoroethane
76-16-4

Hexafluoroethane

tin(IV) iodide

tin(IV) iodide

tetrakis-(trifluoro methyl) stannane
41268-44-4

tetrakis-(trifluoro methyl) stannane

Conditions
ConditionsYield
Sonication; electric discharge, low pressure;90%
Sonication; electric discharge, low pressure;90%
Hexafluoroethane
76-16-4

Hexafluoroethane

tellurium(IV) tetrabromide
10031-27-3

tellurium(IV) tetrabromide

A

bis(trifluoromethyl) ditelluride
1718-20-3

bis(trifluoromethyl) ditelluride

B

bis(trifluoromethyl)tellurium
55642-42-7

bis(trifluoromethyl)tellurium

Conditions
ConditionsYield
other Radiation; at 20°C (46 h); distn.;A 20%
B 33%
other Radiation; at 20°C (46 h); distn.;A 20%
B 33%
other Radiation; at 20°C (46 h); distn.;A 20%
B 33%
other Radiation; at 20°C (46 h); distn.;A 20%
B 33%
Hexafluoroethane
76-16-4

Hexafluoroethane

bismuth(III) iodide
7787-64-6

bismuth(III) iodide

tris(trifluoromethyl)bismuth
5863-80-9

tris(trifluoromethyl)bismuth

Conditions
ConditionsYield
other Radiation; converting BiI3 by radio frequency at 1 Torr into plasma then C2F3 adding continuously, reacting time 100 h; collecting of -78°C and -196°C traps, distn. at -55°C;32%
thallium

thallium

Hexafluoroethane
76-16-4

Hexafluoroethane

C3F9Tl
95244-28-3

C3F9Tl

Conditions
ConditionsYield
In solid matrix other Radiation; in special constructed rotating cold finger reactor; with W basket filled with Tl reactor evacuated, cold finger is cooled by liquid N2 and CF3CF3 added at rate 1-2 mmol/min, radio frequency power is set approx. 50 W and metal slowly evapd. during 3 h; condensed CH2Cl2, matrix dropped into bottom by warming with air, CF3CF3 distd. in vac. at -131 °C, pressurized with 500 mm of N2 and warmed to room temp. with stirring, soln. of Tl(CF3)3 siphonded into flask;25%
Hexafluoroethane
76-16-4

Hexafluoroethane

iodotrifluoromethane
2314-97-8

iodotrifluoromethane

Conditions
ConditionsYield
With dihydrogen peroxide; iodine monofluoride; bis(acetylacetonate)oxovanadium In water Product distribution / selectivity; Heating / reflux;15%
With iodine monofluoride; palladium on activated carbon; copper on carbon; platinum on activated charcoal at 250 - 550℃; Product distribution / selectivity; Vapor phase;
1,2-dimethoxyethane
110-71-4

1,2-dimethoxyethane

Hexafluoroethane
76-16-4

Hexafluoroethane

cadmium
7440-43-9

cadmium

bis(trifluoromethyl)cadmium * dimethoxyethane
76256-47-8

bis(trifluoromethyl)cadmium * dimethoxyethane

Conditions
ConditionsYield
In diethyl ether Cd was vaporized and condensed with CF3 radicals on a liquid N2 cooled surface, after 3 h reactor was warmed to -78°C to pump off the excess C2F6, ether and glyme were condensed into reactor; evapn. of volatiles, extn. of residue with Et2O (inert atmosphere); IR,NMR;11%
indium
7440-74-6

indium

Hexafluoroethane
76-16-4

Hexafluoroethane

trimethylphosphane
594-09-2

trimethylphosphane

tris(trifluoromethyl)indium(trimethylphosphine)
112761-03-2

tris(trifluoromethyl)indium(trimethylphosphine)

Conditions
ConditionsYield
In neat (no solvent) other Radiation; In was vaporized from a tungsten basket and condensed with CF3 radicals, generated from C2F6 by radio frequency glow discharge, at -196°C for 3 h; removal of C2F6 in vac. at -78°C; ether and P(CH3)3 were added by condensation; room temp.;; the volatiles were pumped off; extraction with ether; recrystn. from hexane; performed in an argon dry box;;9%
Hexafluoroethane
76-16-4

Hexafluoroethane

bis(pyridine)bis(trifluoromethyl)zinc

bis(pyridine)bis(trifluoromethyl)zinc

Conditions
ConditionsYield
With pyridine In diethyl ether Zn was vaporized and condensed with CF3 radicals on a liquid N2 cooled surface, after 3 h reactor was warmed to -78°C to pump off the excess C2F6, ether and pyridine were condensed into reactor; warmed to room temp., extd. with CH2Cl2 and recrystd. from hexane; NMR;8%
Hexafluoroethane
76-16-4

Hexafluoroethane

trimethylbismuthine
593-91-9

trimethylbismuthine

A

Dimethyl-trifluormethyl-wismut
677-31-6

Dimethyl-trifluormethyl-wismut

B

Methyl-bis-trifluormethyl-wismut
684-13-9

Methyl-bis-trifluormethyl-wismut

Conditions
ConditionsYield
In gas other Radiation; radio frequency radiation of mixt. of educts in a special pyrex reactor,ratio of educts: C2F6/alkyl metal = 25/1, 2h, condensation of product on a liquid N2 filled cold finger, excess C2F6 removed by vac. distn. at -100°C; sepn. by gas chromy. (10% SE-30 on Chromosorb P);A 5.1%
B 0.9%
Hexafluoroethane
76-16-4

Hexafluoroethane

dimethylmercury
593-74-8

dimethylmercury

A

bis(trifluoromethyl)mercury
371-76-6

bis(trifluoromethyl)mercury

B

methyl(trifluoromethyl)mercury
33327-63-8

methyl(trifluoromethyl)mercury

Conditions
ConditionsYield
In gas other Radiation; radio frequency radiation of mixt. of educts in a special pyrex reactor,ratio of educts: C2F6/alkyl metal = 25/1, 2h, condensation of product on a liquid N2 filled cold finger, excess C2F6 removed by vac. distn. at -100°C; sepn. by gas chromy. (10% SE-30 on Chromosorb P);A 4.9%
B 3.4%

76-16-4Relevant articles and documents

Coomber, J. W.,Whittle, E.

, p. 1394 - 1401 (1967)

Kinetc Study of Infrared Multiphoton Dissociation. Two-Frequency Irradiation of CF3(13)COCF3 molecules at Natural Abundance

Hackett, P. A.,Gauthier, M.,Nip, W. S.,Willis, C.

, p. 1147 - 1152 (1981)

The characteristics of the infrared multiphoton excitation of hexafluoroacetone in region I and region II have been investigated by photolysis with two CO2 laser pulses.The sequenced pulses were at different frequencies and had different fluences so that effects arising in the two regions could be clearly separated.We have studied the isotopically selective dissociation of CF3(13)COCF3 molecules, present at their natural abundance, as a function of five parameters, the frequency of the dissociating second pulse, the fluence of both pulses, the substrate pressure, and the interpulse delay.The results give a picture of the kinetic behavior of vibrationally excited hexafluoroacetone molecules produced in the presence of strong infrared fields.

Dobis et al.

, p. 278 (1968)

Time-Resolved Tunable Diode Laser Detection of Products of the Infrared Multiphoton Dissociation of Hexafluoroacetone: A Line-Strength and Band-Strength Measurement for CF3

Orlando, J. J.,Smith, D. R.

, p. 5147 - 5150 (1988)

This paper describes the time resolved detection of CF3, C2F6, and CO following the infrared multiphoton dissociation of hexafluoroacetone.The primary photolysis mechanism has been estalished as follows: (CF3)2CO -> 2CF3 + CO; 2CF3 -> C2F6.Determination of the CO and C2F6 formed in a single photolysis pulse leads to a measure of an infrared line strength and ν3 band strength for CF3.Quantification of the CF3 in this manner allows a study of its reaction kinetics.The reactions of CF3 with added O2 and NO were found to have third-body rate constants of (2.1 +/- 0.5) * 10-29 and (2.8 +/- 0.7) * 10-29 cm6 molecule-2 s-1, respectively, at room temperature in the presence of 600 mTorr of hexafluoroacetone.

Varetti,Aymonino

, p. 680 (1967)

Intensity and Pressure Effects in Infrared Multiphoton Dissociation. Phitilysis of Hexafluoroacetone and Trifluoromethyl Bromide with 2-ns Laser Pulses

Hackett, P. A.,Malatesta, V.,Nip, W. S.,Willis, C.,Corkum, P. B.

, p. 1152 - 1155 (1981)

We have carried out a study of the effect pulse length on the infrared multiphoton dissociation of hexafluoroacetone.A constant fluence of 1.8 J cm-2 was used, for both short-pulse (2-ns fwhm) and long-pulse (ca. 120 ns fwhm, 5-μs tail, gain swithed, self-mode-locked TEA CO2 laser) irradiation.The dissociation yields are very significantly different both in their magnitude and in their dependence on pressure of substrate of of added hexafluoroethane.At moderate pressures (>0.2 torr) collisional effects dominate the long-pulse irradiation.Possible explanations of these effects are discussed.A study of the isotopically selective dissociation of trifluoromethyl bromide revealed that, although the intensity is high, isotopic selectivity (α ca. 20) is retained.

Photoinduced Sulfur-Nitrogen Bond Rotation and Thermal Nitrogen Inversion in Heterocumulene OSNSO

Wu, Zhuang,Feng, Ruijuan,Xu, Jian,Lu, Yan,Lu, Bo,Yang, Tao,Frenking, Gernot,Trabelsi, Tarek,Francisco, Joseph S.,Zeng, Xiaoqing

, p. 1231 - 1234 (2018/02/09)

An exotic ternary S, N, O heterocumulene OSNSO in syn-syn (A) and syn-anti (B) conformations has been generated in the gas phase through flash vacuum pyrolysis of CF3S(O)NSO at 700 K. Upon visible light irradiation (570 ± 20 or 532 nm), both A and B, isolated in cryogenic matrices (N2, Ne, Ar, and Kr, a higher-energy anti-anti conformer (C). The reverse conformational transformation occurs either through S=N bond rotation (C to A and B) under visible light irradiation (400 ± 20 nm) at 2.8 K or through thermal nitrogen inversion (C to A) in the temperature range of 20-30 K, for which an exceptionally low activation barrier of 1.18 ± 0.07 kcal mol-1 has been experimentally determined.

A method of preparing hexafluoroethane at high temperature

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Paragraph 0036; 0037; 0038, (2017/02/17)

The invention relates to a method of preparing hexafluoroethane at high temperature and belongs to the technical field of fluorine chemical engineering. The method includes adding cobaltous fluoride into a reactor, controlling the temperature of the reactor to be 350-450 DEG C and pressure of the reactor to be 0.1-0.15 MPa, adding a gas mixture of nitrogen trifluoride and nitrogen and pentafluoroethane, with the gas space velocity in a cobaltous oxide bed layer being 0.2-5 /min, and discharging a reaction product from the reactor to obtain the hexafluoroethane. Raw materials used in the method are safe. The method is safe in operation, high in product yield and suitable for large-scale industrial production.

Preparation method of electronic grade hexafluoroethane

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Paragraph 0025-0028; 0032-0035; 0039-0042; 0045-0048; 0053, (2017/06/02)

The invention relates to a preparation method of electronic grade hexafluoroethane. The preparation method comprises the following steps: a hydrogen fluoride gas and a chloropentafluoroethane gas enter a reactor containing a novel catalyst, and undergo a reaction at 300-500 DEG C at an air speed of 1-5 BV/h to prepare crude hexafluoroethane, wherein a molar ratio of the hydrogen fluoride gas to the chloropentafluoroethane gas is 1-3:1; and the crude hexafluoroethane is rectified, the rectified hexafluoroethane enters an adsorption tower containing an adsorbent and is adsorbed to obtain the highly-pure hexafluoroethane product.

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