7783-61-1Relevant articles and documents
Synthesis of Trifluorosilyl Organometallic Complexes from Trifluorosilyl Radicals and Metal Atoms
Bierschenk, T. R.,Guerra, M. A.,Juhlke, T. J.,Larson, S. B.,Lagow, R. J.
, p. 4855 - 4860 (1987)
Trifluorosilyl radicals generated in a radio frequency glow discharge of hexafluorodisilane were reacted with metal atoms to give the first homoleptic trifluorosilyl metal compounds.Bis(trifluorosilyl)tellurium, tris(trifluorosilyl)bismuth, tris(trifluorosilyl)antimony, and bis(trifluorosilyl)mercury were formed in moderate yields by cocondensation of tellurium, bismuth, antimony, and mercury with trifluorosilyl radicals (.SiF3) on a cryogenic surface.In a similar manner trifluorosilyl complexes containing additional ligands were also prepared.For example, we have successfully prepared bis(trifluorosilyl)tris(trimethylphosphine)nickel, (η6-toluene)bis(trifluorosilyl)nickel, bis(trifluorosilyl)bis(trimethylphosphine)palladium, bis(trifluorosilyl)cadmium-glyme, and bis(trifluorosilyl)zinc-2-pyridine.
Reaction of tetrafluorosilane with tris(2-hydroxyethyl)amine, tris(2-trimethylsiloxyethyl)amine and bis(2-trimethylsiloxyethyl)amine and its N-methyl derivative. 1,1-Difluoroquasisilatranes
Voronkov,Grebneva,Trofimova,Albanov,Chernov,Chipanina
, p. 1851 - 1853 (2006)
Reaction of tetrafluorosilane with tris(2-hydroxyethyl)- and tris(2-trimethylsiloxyethyl)amine results in formation of 1-fluorosilatrane and fluorosilatrane in 75 and 53% yield, respectively. Reaction of tetrafluorosilane with bis(2-trimethylsiloxyethyl)a
REACTION OF GLASSES WITH HYDROFLUORIC ACID SOLUTION.
Tso,Pask
, p. 360 - 362,360 - 362 (1982)
The gravimetric method was used to study the reaction between fused silica and silicate glasses with HF acid solution. The reaction was found to be transport-controlled. Additions of Al//2O//3, CaO, or both to fused silica caused a reduction in corrosion resistance of the resulting glasses.
Preparation of high-purity silicon tetrafluoride by thermal dissociation of Na2SiF6
Bulanov,Pryakhin,Balabanov
, p. 1393 - 1395 (2003)
The possibility of preparing high-purity silicon tetrafluoride by the thermal dissociation of pure grade Na2SiF6 was studied. The impurity composition of the product was studied by IR and atomic emission spectroscopy and by mass spec
Integrated utilization of silicon tetrafluoride and zirconium dioxide
Guzeev,D'yachenko,Grishkov
, p. 1900 - 1903 (2003)
The reaction of silicon tetrafluoride with zirconium dioxide was studied. A technological scheme was suggested for utilization of silicon tetrafluoride and reprocessing of spent zirconium dioxide to obtain zircon and zirconium tetrafluoride.
Mechanism and Parameters Controlling the Decomposition Kinetics of Na2SiF6 Powder to SiF4
Soltani,Pech-Canul, Martin I.,González,Bahrami
, p. 379 - 395 (2016)
Sodium hexafluorosilicate (Na2SiF6) powder has been used as a silicon source for formation of Si3N4 coatings by the hybrid precursor system-chemical vapor deposition (HYSY-CVD) route. The quantitative effect of processing time, temperature, gas flow rate, and process atmosphere (N2 and N2:5% NH3) upon the fractional weight loss during the decomposition of Na2SiF6 was studied using a standard L9 Taguchi experimental design and analysis of variance. The decomposition kinetics of Na2SiF6(s) was studied theoretically and experimentally in the temperature range of 550-650°C by applying the shrinking core model. It was found that regardless of atmosphere type, the reaction order is n ≈ 0.12 and that a two-stage mixed mechanism consisting of chemical reaction and boundary layer gas transfer controls the decomposition rate. The determined fractional weight loss during Na2SiF6 decomposition in nitrogen atmosphere is about 1.05-1.5 orders of magnitude greater than that in N2:NH3. The gas flow rate affects the dissociation activation energy, being of 121, 109, and 94 kJ/mol in N2 and of 140, 120, and 115 kJ/mol in N2:NH3, for the flow rates of 20, 60, and 100 cm3/min, respectively, in both atmosphere types. A good agreement is observed by comparing experimental weight loss data with model predictions.
Phase diagram for mullite-SiF4
Moyer
, p. 3253 - 3258 (1995)
At 1 atm of SiF4, mullite and SiF4 react below 660° ± 7°C to form AlF3 and SiO2. From 660° to 1056° ± 5°C, the product is fluorotopaz. Mullite is stable in the presence of 1 atm of SiF4 above 1056°C. The transition temperatures at other pressures of SiF4 can be calculated from log p(atm) = 11.587 - 10811/T(K) and log p(atm) = 9.9609 - 13238/T(K). The phase diagram shows only gas-solid equilibria, but there is evidence for a metastable melt from which acicular mullite and fluorotopaz grow.
Evaluation of FNO and F3NO as substitute gases for semiconductor CVD chamber cleaning
Yonemura,Fukae,Ohira,Mitsui,Takaichi,Sekiya,Beppu
, p. G707-G710 (2003)
Two types of FNO compounds (FNO and F3NO) were evaluated as candidates for new chemical vapor deposition (CVD) chamber cleaning gases. NF3 and C2F6 were measured as the reference. Like NF3, as these gases have no carbon in their molecules, no perfluoro carbon (PFC) is thought to be emitted. FNO is a compound highly susceptible to hydrolysis. F3NO is expected to decompose more easily than NF3 in the atmosphere because its N-F bond has been weakened by introducing an N=O bond into the molecule. Hence, the contribution to global warming of these compounds is expected to be small. Performance of these gases was evaluated by measuring their etch rates and their exhaust gases. The results showed that the etch rate of F3NO is virtually the same as that of NF3, whereas the etch rate of FNO is about 1/2 that of NF3. However, from the results of exhaust gas analysis, it was found that an unexpected side reaction had occurred in the chamber, and therefore, it was confirmed that it is important to take this property into account in designing applications.
IR spectroscopic and ab initio quantum-chemical study of the products of hydrolysis of silicon tetrafluoride at low water concentrations
Sennikov,Ikrin,Ignatov,Bagatur'yants,Klimov
, p. 93 - 97 (1999)
According to the results of IR spectroscopic study and quantum-chemical calculations, hydroxo derivatives SiF4-x(OH)x are formed in the course of hydrolysis of silicon tetrafluoride in the presence of small amount of water along with
C1-C4 hydrocarbon release in the preparation of SiF4 through Na2SiF6 pyrolysis
Krylov,Sorochkina,Bulanov,Lashkov
, p. 7 - 9 (2012)
Hydrocarbon impurities in silicon tetrafluoride originate from the sodium hexafluorosilicate used as a precursor for the preparation of SiF4 through the thermal decomposition of Na2SiF6. We have studied the fraction of C1-C4 hydrocarbons released as a function of temperature during the thermal decomposition of sodium hexafluorosilicate. The lighter hydrocarbons-methane, ethane, and ethylene-are shown to be released at lower temperatures. One source of hydrocarbon impurities in sodium hexafluorosilicate is the sodium carbonate used to prepare it.
