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Indium is a soft, ductile, shiny, silver-white metal with a bluish hue, belonging to Group 13 of the periodic table. It is considered a 'poor metal' and is characterized by its low melting point, non-corrosive nature, and resistance to oxidation at room temperature. Indium has a melting point of 156.60°C, a boiling point of 2,075°C, and a density of 7.31 g/cm3.

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  • 7440-74-6 Structure
  • Basic information

    1. Product Name: Indium
    2. Synonyms: Indium, shot, 2-5mm diam., 99.9+% metals basis;INDIUM, SHOT, 2-5MM DIAM., 99.999%;INDIUM, WIRE, 2.0MM DIAM., 99.99%;INDIUM GRANULATED;INDIUM, FOIL, 0.25MM THICK, 99.999%;INDIUM RODS;INDIUM, FOIL, 0.1MM THICK, 99.999%;INDIUM, FOIL, 1.0MM THICK, 99.999%
    3. CAS NO:7440-74-6
    4. Molecular Formula: In
    5. Molecular Weight: 114.82
    6. EINECS: 231-180-0
    7. Product Categories: Inorganics;Indium;Metal and Ceramic Science;Metals;Catalysis and Inorganic Chemistry;Chemical Synthesis;IndiumMetal and Ceramic Science;IApplication CRMs;ICP CRMs;Alphabetic;Analytical Standards;ICP-OES/-MS;ICPSpectroscopy;Spectroscopy;metal or element
    8. Mol File: 7440-74-6.mol
  • Chemical Properties

    1. Melting Point: 156 °C
    2. Boiling Point: 2000 °C
    3. Flash Point: 2072°C
    4. Appearance: White/wire
    5. Density: 7.3 g/mL at 25 °C(lit.)
    6. Vapor Pressure: <0.01 mm Hg ( 25 °C)
    7. Refractive Index: N/A
    8. Storage Temp.: Flammables area
    9. Solubility: N/A
    10. Water Solubility: insoluble
    11. Stability: Stable. Incompatible with strong acids, strong oxidizing agents, sulfur.
    12. Merck: 14,4947
    13. CAS DataBase Reference: Indium(CAS DataBase Reference)
    14. NIST Chemistry Reference: Indium(7440-74-6)
    15. EPA Substance Registry System: Indium(7440-74-6)
  • Safety Data

    1. Hazard Codes: C,Xn,F,Xi
    2. Statements: 25-26-34-36/37/38-20/21/22-20-11-36/38
    3. Safety Statements: 9-16-36/37/39-36-26-45-28
    4. RIDADR: UN 3089 4.1/PG 2
    5. WGK Germany: 3
    6. RTECS: NL1050000
    7. TSCA: Yes
    8. HazardClass: 8
    9. PackingGroup: III
    10. Hazardous Substances Data: 7440-74-6(Hazardous Substances Data)

7440-74-6 Usage

Uses

Used in Electronics Industry:
Indium is used as a solder for attaching lead wires to semiconductors and transistors due to its low melting point. Its compounds, such as indium arsenide, indium antimonide, and indium phosphide, are used in the construction of specialized semiconductors.
Used in Bearing Alloys:
Indium is used in bearing alloys to improve the electrical conductivity of metals like silver and lead. Alloys of indium and silver, and indium and lead, have better electrical conductivity than pure silver and lead.
Used in Dental Alloys:
Indium is used in dental alloys for its properties and benefits in dental applications.
Used in Semiconductor Research:
Indium is utilized in semiconductor research for the development of new technologies and materials.
Used in Nuclear Reactor Control Rods:
Indium is used in the form of an Ag-In-Cd alloy in nuclear reactor control rods to help control the nuclear fission reaction by absorbing neutrons.
Used in Mirror Surfaces:
Indium's ability to "wet" glass makes it an excellent choice for mirror surfaces, providing a longer-lasting alternative to mercury mirrors.
Used in Synthesis of Therapeutic Particles:
Indium is used in the synthesis of therapeutic particles containing metal ions, characterized by the use of unique ligand sets that make the metal ion complex soluble in biological media to induce selective toxicity in diseased cells.
Occurrence:
Indium is a rare metal, ranking as the 69th most abundant element. It is found in very small concentrations and is always combined with other metal ores. Indium is recovered as a by-product of smelting other metal ores such as aluminum, antimony, cadmium, arsenic, and zinc. It is found in metal ores and minerals located in Russia, Japan, Europe, Peru, Canada, and the western part of the United States.
Industrial uses:
The three largest uses of indium are in semiconductor devices, bearings, and low melting point alloys. Indium is also valued as a plating metal, especially for reflectors, due to its bright color, light reflectance, and corrosion resistance.

Isotopes

There are a total of 73 isotopes of indium. All are radioactive with relativelyshort half-lives, except two that are considered stable. Isotope In-113 makes up just4.29% of the total indium found in the Earth’s crust. The isotope In-115, with a half-lifeof 4.41×10-14 years contributes the balance (95.71%) of the element’s existence in theEarth’s crust.

Origin of Name

Indium’s name is derived from the Latin word indicum, meaning “indigo,” which is the color of its spectral line when viewed by a spectroscope.

Characteristics

Indium has one odd characteristic in that in the form of a sheet, like the metal tin, it willemit a shrieking sound when bent rapidly. Indium has some of the characteristics of othermetals near it in the periodic table and may be thought of as an “extension” of the secondseries of the transition elements. Although it is corrosion-resistant at room temperature, it willoxidize at higher temperatures. It is soluble in acids, but not in alkalis or hot water.

History

Discovered by Reich and Richter, who later isolated the metal. Indium is most frequently associated with zinc materials, and it is from these that most commercial indium is now obtained; however, it is also found in iron, lead, and copper ores. Until 1924, a gram or so constituted the world’s supply of this element in isolated form. It is probably about as abundant as silver. About 4 million troy ounces ofindium are now produced annually in the Free World. Canada is presently producing more than 1,000,000 troy ounces annually. The present cost of indium is about $2 to $10/g, depending on quantity and purity. It is available in ultrapure form. Indium is a very soft, silvery-white metal with a brilliant luster. The pure metal gives a high-pitched “cry” when bent. It wets glass, as does gallium. Indium has found application in making low-melting alloys; an alloy of 24% indium–76% gallium is liquid at room temperature. Indium is used in making bearing alloys, germanium transistors, rectifiers, thermistors, liquid crystal displays, high definition television, batteries, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion. There is evidence that indium has a low order of toxicity; however, care should be taken until further information is available. Seventy isotopes and isomers are now recognized (more than any other element). Natural indium contains two isotopes. One is stable. The other, 115In, comprising 95.71% of natural indium is slightly radioactive with a very long half-life.

Production Methods

Mineral sources are most commonly dark sphalerite (ZnS), marmatite, and christophite (FeS:ZnS). Indium also occurs in small quantities in tin ores, siderite, and manganese and tungsten ores.Gallium is often associated with indium in zinc and tin ores. Many sulfide ores of copper, iron, lead, cobalt, and bismuth contain small quantities of indium. Zinc smelter flue dusts, in some cases, contain more than 1% indium, and are the largest commercial source of the metal. Other commercial sources are plant residues and dross from the refining of zinc, lead, and cadmium. Indium is recovered from zinc processing residues by acid leaching followed by chemical separation from the accompanying elemental impurities such as zinc, cadmium, aluminum, arsenic, and antimony. Final purification by aqueous electrolysis of the salts at a controlled potential yields a product of 99.9% purity. Canada and Peru supply the greatest amounts of unwrought waste and scrap. Next in order are Japan, Germany, and the United Kingdom. The pattern of indium usage, and potential industrial hazard, is 30% in solders, low-melting alloys, and coatings; 30% in instrument applications and holding devices; 18% in electronic components; 6% in nuclear reactor controls; and 16% in research and other uses.

Reactivity Profile

Indium is a non-combustible solid in bulk form but is flammable in the form of a dust. Reacts with strong oxidizing agents. Reacts explosively with dinitrogen tetraoxide dissolved in acetonitrile. Reacts violently with mercury(II)bromide at 350°C. Mixtures with sulfur ignite when heated.

Hazard

Metal and its compounds are toxic by inhalation.

Hazard

Indium metal dust, particles, and vapors are toxic if ingested or inhaled, as are most of thecompounds of indium. This requires the semiconductor and electronics industries that useindium compounds to provide protection for their workers.

Health Hazard

Indium (In) and compounds cause injury to the lungs, liver and kidneys in animals. There are no reports of toxicity in humans. When indium was applied to the skin there was no evidence of irritation.

Carcinogenicity

Indium has not been tested for its ability to cause cancer in animals. However, the probable carcinogenic properties of indium are linked to alterations in the synthesis and maintenance of enzyme systems that metabolize organic carcinogens. A compromise in the ability of these metabolic systems would lead to altered cellular responses to organic carcinogenic substances.

Purification Methods

Before use, the metal surface is cleaned with dilute HNO3, followed by thorough washing with water and an alcohol rinse. [D.nges in Handbook of Preparative Inorganic Chemistry (Ed. Brauer) Academic Press Vol I p 856 1963.]

Check Digit Verification of cas no

The CAS Registry Mumber 7440-74-6 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,4 and 0 respectively; the second part has 2 digits, 7 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 7440-74:
(6*7)+(5*4)+(4*4)+(3*0)+(2*7)+(1*4)=96
96 % 10 = 6
So 7440-74-6 is a valid CAS Registry Number.
InChI:InChI=1/In

7440-74-6 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
  • Price
  • Detail
  • Alfa Aesar

  • (43414)  Indium slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, 99.998% (metals basis)   

  • 7440-74-6

  • 25g

  • 2748.0CNY

  • Detail
  • Alfa Aesar

  • (43414)  Indium slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, 99.998% (metals basis)   

  • 7440-74-6

  • 100g

  • 6653.0CNY

  • Detail
  • Alfa Aesar

  • (L18757)  Indium powder, 99+%   

  • 7440-74-6

  • 5g

  • 460.0CNY

  • Detail
  • Alfa Aesar

  • (L18757)  Indium powder, 99+%   

  • 7440-74-6

  • 25g

  • 1843.0CNY

  • Detail
  • Alfa Aesar

  • (11384)  Indium foil, 0.5mm (0.02in) thick, Puratronic?, 99.9975% (metals basis)   

  • 7440-74-6

  • 25x25mm

  • 347.0CNY

  • Detail
  • Alfa Aesar

  • (11384)  Indium foil, 0.5mm (0.02in) thick, Puratronic?, 99.9975% (metals basis)   

  • 7440-74-6

  • 50x50mm

  • 1178.0CNY

  • Detail
  • Alfa Aesar

  • (11384)  Indium foil, 0.5mm (0.02in) thick, Puratronic?, 99.9975% (metals basis)   

  • 7440-74-6

  • 50x100mm

  • 2121.0CNY

  • Detail
  • Alfa Aesar

  • (11384)  Indium foil, 0.5mm (0.02in) thick, Puratronic?, 99.9975% (metals basis)   

  • 7440-74-6

  • 100x200mm

  • 7637.0CNY

  • Detail
  • Alfa Aesar

  • (11462)  Indium wire, 1.0mm (0.04in) dia, Puratronic?, 99.998+% (metals basis)   

  • 7440-74-6

  • 1m

  • 1006.0CNY

  • Detail
  • Alfa Aesar

  • (11462)  Indium wire, 1.0mm (0.04in) dia, Puratronic?, 99.998+% (metals basis)   

  • 7440-74-6

  • 5m

  • 3226.0CNY

  • Detail
  • Alfa Aesar

  • (11462)  Indium wire, 1.0mm (0.04in) dia, Puratronic?, 99.998+% (metals basis)   

  • 7440-74-6

  • 25m

  • 13416.0CNY

  • Detail
  • Alfa Aesar

  • (46661)  Indium wire, 1.0mm (0.04in) dia, annealed, Puratronic?, 99.998+% (metals basis)   

  • 7440-74-6

  • 1m

  • 1218.0CNY

  • Detail

7440-74-6SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name indium atom

1.2 Other means of identification

Product number -
Other names UNII-045A6V3VFX

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-74-6 SDS

7440-74-6Synthetic route

indium sulfate

indium sulfate

indium
7440-74-6

indium

Conditions
ConditionsYield
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; electrolyte: in the presence of K-Na-tartarate;100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of H2SO4;100%
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of acetic acid, Na-acetate;100%
triisobutylindium
6731-23-3

triisobutylindium

A

indium
7440-74-6

indium

B

isobutene
115-11-7

isobutene

Conditions
ConditionsYield
In decalin byproducts: isobutane; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;A >99
B 96%
([(2,6-i-Pr2-C6H3)NC(Me)]2CH)Ga(Et)InEt2

([(2,6-i-Pr2-C6H3)NC(Me)]2CH)Ga(Et)InEt2

A

indium
7440-74-6

indium

B

([(2,6-i-Pr2-C6H3)NC(Me)]2CH)GaEt2

([(2,6-i-Pr2-C6H3)NC(Me)]2CH)GaEt2

C

Triethylindium
923-34-2

Triethylindium

Conditions
ConditionsYield
In toluene at 20℃; for 24h; Inert atmosphere; Schlenk technique; Glovebox;A 96%
B 94%
C n/a
cobaltocene
1277-43-6

cobaltocene

indium(I) trifluoromethanesulfonate
675617-71-7

indium(I) trifluoromethanesulfonate

A

indium
7440-74-6

indium

B

[(η(5)-C5H5)2Co]O3SCF3

[(η(5)-C5H5)2Co]O3SCF3

Conditions
ConditionsYield
In dichloromethane addn. of soln. of Cp2Co in CH2Cl2 to suspn. of InOTf in CH2Cl2; pptn., filtration, rinsing of ppt. with CH2Cl2; removal of solvent in vac.; slow evapn of concd. CH2Cl2 soln.; crystn.;A n/a
B 90.1%
indium(II) bromide

indium(II) bromide

A

indium
7440-74-6

indium

B

indium tribromide
13465-09-3

indium tribromide

Conditions
ConditionsYield
With dimethyl sulfoxide In benzeneA 90%
B n/a
With [2,2]bipyridinyl In benzeneA 90%
B n/a
With triethylamine In benzeneA 90%
B n/a
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

1,2-di-p-tolylethane
538-39-6

1,2-di-p-tolylethane

Conditions
ConditionsYield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 85%
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

1,2-di-m-tolylethane
4662-96-8

1,2-di-m-tolylethane

Conditions
ConditionsYield
In m-xylene=m-xylol pyrolysis in m-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 83%
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

1,2-bis(2-methylphenyl)ethane
952-80-7

1,2-bis(2-methylphenyl)ethane

Conditions
ConditionsYield
In o-xylene=o-xylol pyrolysis in o-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 72%
triisopropyl indium
17144-80-8

triisopropyl indium

A

indium
7440-74-6

indium

B

1,2-di-p-tolylethane
538-39-6

1,2-di-p-tolylethane

Conditions
ConditionsYield
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 67%
indium chloride

indium chloride

lithium pentamethylcyclopentadienide
51905-34-1

lithium pentamethylcyclopentadienide

A

indium
7440-74-6

indium

B

indiumpentamethylcyclopentadienide

indiumpentamethylcyclopentadienide

C

bis(pentamethylcyclopentadienyl)indium(III) chloride
117469-41-7

bis(pentamethylcyclopentadienyl)indium(III) chloride

D

decamethylfulvalene
69446-48-6

decamethylfulvalene

Conditions
ConditionsYield
In diethyl ether InCl added to suspension of Li(C5(CH3)5), stirred for 5h at room temp.; exclusion of air and moisture; filtered, washed four times with ether, sublimation; elem. anal.;A 21%
B 62.01%
C 5%
D 2.5%
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

2,2',3,3'-tetrahydro-1H,1'H-1,1'-biindene
82721-36-6

2,2',3,3'-tetrahydro-1H,1'H-1,1'-biindene

Conditions
ConditionsYield
In further solvent(s) pyrolysis in indane under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 62%
tri-n-butylindium
15676-66-1

tri-n-butylindium

A

1-butylene
106-98-9

1-butylene

B

indium
7440-74-6

indium

Conditions
ConditionsYield
In decalin byproducts: butene; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;A 60%
B >99
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

1,2-bis(4-chlorophenyl)ethane
5216-35-3

1,2-bis(4-chlorophenyl)ethane

Conditions
ConditionsYield
In further solvent(s) pyrolysis in p-chlorotoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 60%
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

1,1'-bitetralyl
1154-13-8

1,1'-bitetralyl

Conditions
ConditionsYield
In tetralin pyrolysis in tetralin under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 60%
Conditions
ConditionsYield
In ethylbenzene pyrolysis in ethylbenzene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 51%
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

3,4-dimethylhexane
583-48-2

3,4-dimethylhexane

C

butene-2
107-01-7

butene-2

D

n-butane
106-97-8

n-butane

Conditions
ConditionsYield
In decalin pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products;A >99
B 10%
C 30%
D 40%
tri-sec-butylindium
101749-61-5

tri-sec-butylindium

A

indium
7440-74-6

indium

B

1,2-bis(4-methoxyphenyl)ethane
1657-55-2

1,2-bis(4-methoxyphenyl)ethane

Conditions
ConditionsYield
In further solvent(s) pyrolysis in p-methoxytoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products;A n/a
B 35%
K(1+)*{HIn(CH2C(CH3)3)3}(1-)=K{HIn(CH2C(CH3)3)3}
139408-74-5

K(1+)*{HIn(CH2C(CH3)3)3}(1-)=K{HIn(CH2C(CH3)3)3}

Chlorodiisopropylphosphane
40244-90-4

Chlorodiisopropylphosphane

A

indium
7440-74-6

indium

B

(((CH3)3CCH2)2In(P(CH(CH3)2)2))2
380456-91-7

(((CH3)3CCH2)2In(P(CH(CH3)2)2))2

C

((CH3)3CCH2)3In*P(H)(CH(CH3)2)2
380456-92-8

((CH3)3CCH2)3In*P(H)(CH(CH3)2)2

D

((CH3)3CCH2)3In*P2(CH(CH3)2)4
380456-93-9

((CH3)3CCH2)3In*P2(CH(CH3)2)4

Conditions
ConditionsYield
In pentane byproducts: H2, (Me3CCH2)P(i-Pr)2, KCl; under Ar, standard vac. line techniques; pentane solns. of ClP(i-Pr)2 and In compd. (molar ratio 1:1) cooled to -78°C; combined; warmed slowly to room temp.; stirred for 2 d; pentane sol. products sepd. from ppt. by extn. (8 times); solvent removed by vac. distn. at 0°C; mixt. of three In compds. obtained; P2(i-Pr)4 adduct crystd. at room temp. in drybox; detd. by (1)H and (31)P NMR spectroscopy;A n/a
B n/a
C n/a
D 33.7%
indium chloride

indium chloride

N,N,N,N,-tetramethylethylenediamine
110-18-9

N,N,N,N,-tetramethylethylenediamine

indium(III) chloride
10025-82-8

indium(III) chloride

A

indium
7440-74-6

indium

Cl2InCH2InCl2((CH2N(CH3)2)2)2
99666-60-1

Cl2InCH2InCl2((CH2N(CH3)2)2)2

C

InCl3*0.67(CH2N(CH3)2)2*0.67CH2Cl2

InCl3*0.67(CH2N(CH3)2)2*0.67CH2Cl2

Conditions
ConditionsYield
With methylene chloride In dichloromethane; toluene equimolar amts. of InCl and InCl3 suspended in CH2Cl2-toluene (1:1, v/v) at -80°C, TMEDA added, stirred, allowed to reach room temp., further stirred for 1 h (total react. time 3-4 h); filtered, crystals deposited on standing collected and dried under vac., further crop obtained by addn. of Et2O to mother liquor and recrystn. (CH2Cl2); InCl3 solvate isolated from separate expt. by addn. of petroleum ether to react. mixt.; elem. anal.;A n/a
B 20%
C n/a
lithium tetrahydridoindanate
128448-03-3

lithium tetrahydridoindanate

quinuclidine hydrochloride
39896-06-5

quinuclidine hydrochloride

lithium bromide
7550-35-8

lithium bromide

A

indium
7440-74-6

indium

B

[H(quinuclidine)2][In5Br8(quinuclidine)4]

[H(quinuclidine)2][In5Br8(quinuclidine)4]

Conditions
ConditionsYield
In diethyl ether byproducts: H2, LiCl; quinuclidine hydrochloride added over 5 min to an in situ generated soln. of LiInH4 contg. LiBr in Et2O at -78°C, warmed to -30°C,stirred for 2 h, filtered, kept at this temp. for 72 h; evapd. (vac.), extd. (toluene), crystd. at -50°C overnight;A n/a
B 17%
indium(I) bromide

indium(I) bromide

sodium tri-tert-butylsilanide
103349-41-3

sodium tri-tert-butylsilanide

A

indium
7440-74-6

indium

B

tetrasupersilyldiindium
174809-84-8

tetrasupersilyldiindium

Conditions
ConditionsYield
In tetrahydrofuran byproducts: tBu3SiH, tBu3SiBr, (tBu3Si)2; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;A n/a
B 16.2%
In tetrahydrofuran byproducts: NaBr; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.;A n/a
B 16.2%
(Cp(*)Fe(CO)2)2InI
871347-07-8

(Cp(*)Fe(CO)2)2InI

sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate
79060-88-1

sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate

A

indium
7440-74-6

indium

B

[((η5-C5Me5)Fe(CO)2)2(μ-I)][B(C6H3(CF3)2-3,5)4]
871347-11-4

[((η5-C5Me5)Fe(CO)2)2(μ-I)][B(C6H3(CF3)2-3,5)4]

Conditions
ConditionsYield
In dichloromethane (N2 or Ar); a soln. of Fe complex added to a suspn. of B complex at -78°C, warmed to 20°C over 30 min, stirred for 3 h; filtered, layered with hexanes;A n/a
B 15%
[(C2H5)2InSb(Si(CH3)3)2]3

[(C2H5)2InSb(Si(CH3)3)2]3

A

indium
7440-74-6

indium

B

indium(III) antimonide

indium(III) antimonide

Conditions
ConditionsYield
In neat (no solvent) byproducts: ethylene, HSiMe3; heated under vac. to 400°C for 10 h;A n/a
B 13%
indium chloride

indium chloride

N,N,N,N,-tetramethylethylenediamine
110-18-9

N,N,N,N,-tetramethylethylenediamine

indium(III) chloride
10025-82-8

indium(III) chloride

A

indium
7440-74-6

indium

Cl2InCH2InCl2((CH2N(CH3)2)2)2
99666-60-1

Cl2InCH2InCl2((CH2N(CH3)2)2)2

Conditions
ConditionsYield
With methylene chloride In dichloromethane InCl and catalitic amts. of InCl3 suspended in CH2Cl2 at -80°C, TMEDA added, allowed to reach room temp. over ca. 2 h; Et2O added, ppt. collected, dried;A n/a
B 10%
dicarbonylcyclopentadienyliodoiron(II)
12078-28-3, 38979-86-1

dicarbonylcyclopentadienyliodoiron(II)

[CH((CH3)2CN-2,6-(i)Pr2C6H3)2In]
769959-24-2

[CH((CH3)2CN-2,6-(i)Pr2C6H3)2In]

sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate
79060-88-1

sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate

A

indium
7440-74-6

indium

B

[((2,6-diisopropylphenyl-NC(Me))2CH)Fe(III)(η5-cyclopentadienyl)(CO)][B(C6H3(CF3)2-3,5)4]
1036767-96-0

[((2,6-diisopropylphenyl-NC(Me))2CH)Fe(III)(η5-cyclopentadienyl)(CO)][B(C6H3(CF3)2-3,5)4]

Conditions
ConditionsYield
In tetrahydrofuran under N2 or Ar; THF added to solid mixt. of Fe complex and NaB(C6H3(CF3)2)4; THF soln. of In compd. added; volatiles removed; extd. into toluene; soln. filtered; layered with hexane; crystd. for 1 wk; elem. anal.;A n/a
B 10%
indium(III) oxide

indium(III) oxide

indium
7440-74-6

indium

Conditions
ConditionsYield
With magnesium violent but incomplete reaction;
With sodium carbonate; pyrographite in blow pipe;
With hydrogen in tube with H2-flow;
indium(III) oxide

indium(III) oxide

manganese
7439-96-5

manganese

A

indium
7440-74-6

indium

B

manganese(II) oxide

manganese(II) oxide

Conditions
ConditionsYield
In neat (no solvent) (Ar); In2O3 and Mn reacted in 1:1 or 1:2 or 2:1 molar ratio; powdered inmortar; sealed under vacuum in quartz ampoule; heated to 723 K and with 0.5 K/h to 973 K; maintained for 7 days; cooled to 0.8 K/h to 473 K; le ft standing at room temp.;
indium
7440-74-6

indium

water
7732-18-5

water

hydrogen
1333-74-0

hydrogen

Conditions
ConditionsYield
byproducts: In2O3; at 473°K and then at 673-773°K more;100%
arsenic

arsenic

indium
7440-74-6

indium

indium arsenide

indium arsenide

Conditions
ConditionsYield
In neat (no solvent) In, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 150h;100%
In neat (no solvent) deposited at GaAs by periodic supply of As and Ga species, deposition times was 25 min;
In, As sources used on InAs substrate at 450 to 525°C;
In neat (no solvent) mixt. melting (evac. sealed quartz capsule, 7E-4 hPa); differential thermal anal.;
In neat (no solvent, solid phase) annealing (800 K, 7 d);
indium
7440-74-6

indium

antimony
7440-36-0

antimony

indium(III) antimonide

indium(III) antimonide

Conditions
ConditionsYield
In neat (no solvent) In, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 500.+-.20°C, 70h or heated at 400.+-.20°C, 110h;100%
In melt crystn. from the melt with nearly stoichiometric composition;; single crystals obtained;;
In neat (no solvent) High Pressure; 0.7 GPa, laser heating;
indium
7440-74-6

indium

2,3-naphthalenediol
92-44-4

2,3-naphthalenediol

In{OC10H6(OH)-2,3}
121581-68-8, 121581-73-5

In{OC10H6(OH)-2,3}

Conditions
ConditionsYield
With Et4NClO4 In acetonitrile byproducts: H2; Electrolysis; using indium metall anode, platinum wire cathode in soln. of Et4NClO4 and dihydroxynaphthalene (2 h, N2, 20 mA), hydrogen gas evolving at the cathode and forming product at the anode; product collected by filtration, washed with acetonitrile and Et2O, dried (vac.); elem. anal.;100%
indium
7440-74-6

indium

lanthanum
7439-91-0

lanthanum

tellurium

tellurium

cesium chloride

cesium chloride

A

CsInTe2

CsInTe2

B

Cs3LaCl6

Cs3LaCl6

Conditions
ConditionsYield
at 299.84 - 999.84℃;A 100%
B n/a
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0286Sn0286In0143Sb0143Te

Ge0286Sn0286In0143Sb0143Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.72Sn0.08In0067Sb0067Te

Ge0.72Sn0.08In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.24Sn0.56In0067Sb0067Te

Ge0.24Sn0.56In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.08Sn0.72In0067Sb0067Te

Ge0.08Sn0.72In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4In0067Sb0067Te

Ge0.4Sn0.4In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.35Sn0.35In0.1Sb0.1Te

Ge0.35Sn0.35In0.1Sb0.1Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.5Sn0.5InSbTe4

Ge0.5Sn0.5InSbTe4

Conditions
ConditionsYield
at 550 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

GeSnInSbTe5

GeSnInSbTe5

Conditions
ConditionsYield
at 350 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.8In0067Sb0067Te

Ge0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8In0067Sb0067Te

Sn0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

tellurium

tellurium

Ge0.4Sn0.4In0.13Te

Ge0.4Sn0.4In0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
indium
7440-74-6

indium

trifluorormethanesulfonic acid
1493-13-6

trifluorormethanesulfonic acid

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

indium(III) triflate - dimethylsulfoxide (1/7)

indium(III) triflate - dimethylsulfoxide (1/7)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. In under O2 atm. treated with DMSO and triflic acid (3 equiv.) in3 portions, heated at 100°C for 22 h;99%
arsenic

arsenic

niobium

niobium

indium
7440-74-6

indium

potassium
7440-09-7

potassium

10K(1+)*NbInAs6(10-)=K10NbInAs6

10K(1+)*NbInAs6(10-)=K10NbInAs6

Conditions
ConditionsYield
In neat (no solvent) mixt. K, Nb, In, and As was sealed in Nb container, enclosed in evacuated fused-silica ampule and heated at 600°C for a week and cooled slowly; elem. anal.;99%
gadolinium

gadolinium

germanium
7440-56-4

germanium

indium
7440-74-6

indium

Gd2InGe2

Gd2InGe2

Conditions
ConditionsYield
In neat (no solvent) (Ar); a mixt. of Gd, Ge, and In sealed (vac.), heated;99%
indium
7440-74-6

indium

lanthanum
7439-91-0

lanthanum

LaAu2In4

LaAu2In4

Conditions
ConditionsYield
In melt heating lanthanum, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;99%
indium
7440-74-6

indium

praseodymium

praseodymium

PrAu2In4

PrAu2In4

Conditions
ConditionsYield
In melt heating praseodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h in vac., keeping at 1000°C for 120 h; cooing to room temp. for 48 h, X-ray anal.;99%
Conditions
ConditionsYield
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;99%
tetrahydrofuran
109-99-9

tetrahydrofuran

indium
7440-74-6

indium

bromopentafluorobenzene
344-04-7

bromopentafluorobenzene

bromine
7726-95-6

bromine

bis(tetrahydrofuran)(pentafluorophenyl)indium dibromide

bis(tetrahydrofuran)(pentafluorophenyl)indium dibromide

Conditions
ConditionsYield
In tetrahydrofuran99%
pyridine
110-86-1

pyridine

indium
7440-74-6

indium

bromopentafluorobenzene
344-04-7

bromopentafluorobenzene

bromine
7726-95-6

bromine

bis(pyridine)(pentafluorophenyl)indium dibromide

bis(pyridine)(pentafluorophenyl)indium dibromide

Conditions
ConditionsYield
In dichloromethane99%
neodymium

neodymium

indium
7440-74-6

indium

NdAu2In4

NdAu2In4

Conditions
ConditionsYield
In melt heating neodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;99%
indium
7440-74-6

indium

toluene-4-sulfonic acid
104-15-4

toluene-4-sulfonic acid

indium(III) tosylate

indium(III) tosylate

Conditions
ConditionsYield
In nitromethane at 20℃; for 1.5h; Sonication;99%
indium
7440-74-6

indium

ethanethiol
75-08-1

ethanethiol

tris(ethylthio)indane

tris(ethylthio)indane

Conditions
ConditionsYield
With oxygen; tetraethylammonium perchlorate In acetonitrile Electrolysis; bubbling O2 through a soln. of thiol in CH3CN/Et4NClO4, electrolysis (open to atmosphere): Pt cathode, In anode, 15V, 50 mA, 1.0 h react. time, at the end of electrolysis stirring for ca. 12 h; filtration, washing with CH3CN, then petroleum ether, drying in vac.; elem. anal.;98%
indium
7440-74-6

indium

trifluorormethanesulfonic acid
1493-13-6

trifluorormethanesulfonic acid

indium(III) triflate

indium(III) triflate

Conditions
ConditionsYield
In nitromethane at 20℃; for 0.5h; Sonication;98%

7440-74-6Relevant articles and documents

Formation and thermal decomposition of indium oxynitride compounds

Tokarzewski,Podsiadlo

, p. 481 - 488 (1998)

During the reactions of lithium oxide with indium nitride, lithium nitride with indium oxide, and lithium nitride with lithium indate LiInO2, the formation of a previously unknown crystalline phase, of composition Li4InNO2, was observed. The course of thermal decomposition of the new compound was determined.

EFFECTIVE SUPPORTED-In2O3 FOR THE PRODUCTION OF HYDROGEN FROM WATER BY THE REDUCTION-OXIDATION CYCLE OF In2O3

Otsuka, Kiyoshi,Shibuya, Shin-ichi,Morikawa, Akira

, p. 987 - 990 (1982)

Eleven kinds of carriers for In2O3 have been tested for the production of hydrogen from water by a reduction and oxidation cycle of In2O3.Of these, the most effective carriers were TiO2, ZrO2, active carbon and ZnO, because the high enchancing effects on the rates of reduction and oxidation and the high final yields of hydrogen by the reduced In2O3 have been observed by usihg these carriers.

Electrodeposition of indium onto Mo/Cu for the deposition of Cu(In,Ga)Se2 thin films

Valderrama,Miranda-Hernández,Sebastian,Ocampo

, p. 3714 - 3721 (2008)

A study of the electrodeposition and the oxidation process of indium on Mo/Cu substrates from a bath containing 0.008 M InCl3, 0.7 M LiCl at pH 3 is described in this work. The voltamperometric study showed a reduction process which corresponds to the conversion of In3+ to In0 and an oxidation process which takes place in different steps. Utilizing the chronoamperometric technique the total efficiency of process, the number of monolayers, the film thickness and the diffusion coefficient were evaluated. The analysis of current transients, using theoretical growth model, showed that the electrodeposition of indium adjusts to a three-dimensional growth under instantaneous nucleation limited by diffusion. The kinetic growth parameters were evaluated through a non-linear fit. The films were characterized by X-ray diffraction and scanning electron microscopy techniques. These studies showed that the films were of crystalline in nature with compact and uniform surface, even for the film with a deposition time of 1 min.

Pressure-induced decomposition of indium hydroxide

Gurlo, Aleksander,Dzivenko, Dmytro,Andrade, Miria,Riedel, Ralf,Lauterbach, Stefan,Kleebe, Hans-Joachim

, p. 12674 - 12678 (2010)

A static pressure-induced decomposition of indium hydroxide into metallic indium that takes place at ambient temperature is reported. The lattice parameter of c-In(OH)3 decreased upon compression from 7.977(2) to ~7.45 A at 34 GPa, corresponding to a decrease in specific volume of ~18%. Fitting the second-order Birch-Murnaghan equation of state to the obtained compression data gave a bulk modulus of 99 ± 3 GPa for c-In(OH)3. The c-In(OH)3 crystals with a size of ~100 nm are comminuted upon compression, as indicated by the grain-size reduction reflected in broadening of the diffraction reflections and the appearance of smaller (~5 nm) incoherently oriented domains in TEM. The rapid decompression of compressed c-In(OH)3 leads to partial decomposition of indium hydroxide into metallic indium, mainly as a result of localized stress gradients caused by relaxation of the highly disordered indium sublattice in indium hydroxide. This partial decomposition of indium hydroxide into metallic indium is irreversible, as confirmed by angle-dispersive X-ray diffraction, transmission electron microscopy imaging, Raman scattering, and FTIR spectroscopy. Recovered c-In(OH)3 samples become completely black and nontransparent and show typical features of metals, i.e., a falling absorption in the 100-250 cm-1 region accompanied by a featureless spectrum in the 250-2500 cm-1 region in the Raman spectrum and Drude-like absorption of free electrons in the region of 4000-8000 cm-1 in the FTIR spectrum. These features were not observed in the initial c-In(OH) 3, which is a typical white wide-band-gap semiconductor.

Synthesis, characterisation and theoretical studies of amidinato-indium(I) and thallium(I) complexes: Isomers of neutral group 13 metal(I) carbene analogues

Jones, Cameron,Junk, Peter C.,Platts, Jamie A.,Rathmann, Daniel,Stasch, Andreas

, p. 2497 - 2499 (2005)

The synthesis and characterisation of the monomeric amidinato-indium(I) and thallium(I) complexes, [M(Piso)]PisoH, M = In or Tl, Piso- = [ArNC(But)NAr]-, Ar = C6H3Pr 2i-2,6, are reported. These complexes, in which the metal centre is chelated by the amidinate ligand in an N,η3-arene- fashion, can be considered as isomers of four-membered group 13 metal(I) carbene analogues. Theoretical studies have compared the relative energies of both isomeric forms of a model complex, [In{PhNC(H)NPh}]. The Royal Society of Chemistry 2005.

Bidentate N-heterocyclic carbene complexes of group 13 trihydrides and trihalides

Baker, Robert J.,Cole, Marcus L.,Jones, Cameron,Mahon, Mary F.

, p. 1992 - 1996 (2002)

Treatment of the potentially chelating bis-carbene, 1,2-ethylene-3,3′-di-tert-butyl-diimidazole-2,2′-diylidene, EtIBut, with [MH3(NMe3)], M= Al, Ga, In, in a 1:1 or 1:2 stoichiometery led to good yields of the metal rich 2

Reduction of indium(III) oxide to indium through mechanochemical route

Kano, Junya,Kobayashi, Eiko,Tongamp, William,Saito, Fumio

, p. 204 - 205 (2008)

A nonthermal reduction of indium(III) oxide (In2O3) to metallic indium (In) was achieved through mechanochemical route in this work. A mixture of In2O3 and lithium nitride (Li3N) under ammonia (NH3) and/or nitrogen (N2) gas environments was milled in a planetary ball mill with uni-size ZrO2 balls to induce mechanochemical reaction between the starting materials. Metallic indium was obtained after milling for 120 min, and the results are confirmed by X-ray diffraction (XRD) analysis. Washing of the milled product with water to remove by-products using the planetary ball mill for a further 10 min resulted in formation of pellets which were analyzed by EPMA, results clearly show that high purity indium metal was obtained. Copyright

Synthesis of group 13 sesquialkoxides and their application as precursors to crystalline oxide films

Basharat, Siama,Betchley, William,Carmalt, Claire J.,Barnett, Sarah,Tocher, Derek A.,Davies, Hywel O.

, p. 403 - 407 (2007)

The reaction of Me3Ga with an excess of 4-methylbenzyl alcohol (4-MeC6H4CH2OH) in toluene, under reflux conditions, resulted in the formation of the sesquialkoxide [Ga{MeGa(OCH 2C6H4Me-4)3}3] (1). In contrast, reaction of Me3In with excess of 4-methylbenzyl alcohol (4-MeC6H4CH2OH) under the same conditions afforded another type of sesquialkoxide, [In{Me2In(OCH 2C6H4Me-4)2}3] (2). Compounds 1 and 2 have been characterized by NMR, FTIR, and elemental analysis, and the structure of 1 was determined by X-ray crystallography. The structure of 1 consists of a central Ga3+ ion coordinated by three [MeGa(OCH 2C6H4Me-4)(μ-OCH2C 6H4Me-4)2]- units such that it has a coordination number of six. The surrounding metal ions are four coordinate. 1H NMR data for 1 indicate that in solution two isomers (1:1) are present, namely, the C1- and C3-symmetrical isomers, but in the solid state 1 exists as the C3-symmetrical isomer. Compound 1 possesses the correct ratio of Ga:O atoms (2:3) for that found in gallium oxide (Ga2O3), and LPCVD of 1 afforded crystalline Ga 2O3 films at 600°C. These results are surprising, as Ga2O3 films are typically only crystalline above 700°C.

Coordination Modes of 2,5-Di(tert-butyl)pyrrolide - Crystal Structures of HPyr*, Pyr*H·thf, (thf)2LiPyr*, and [(Me3Si)3C-Zn]2(μ-Cl)(μ-Pyr*) (Pyr* = 2,5-tBu2NC4H2)

Westerhausen, Matthias,Wieneke, Michael,Noeth, Heinrich,Seifert, Thomas,Pfitzner, Arno,Schwarz, Wolfgang,Schwarz, Oliver,Weidlein, Johann

, p. 1175 - 1182 (1998)

The lithiation of 2,5-di(tert-butyl)pyrrole (1) yields bis(tetrahydrofuran)lithium 2,5-di(tert-butyl)pyrrolide (2), which is monomeric in solution as well as in the solid state. Due to the coordination number of three for the lithium atom, short Li-O and

Laser excitation and photoionization spectroscopy of the AO+ and B1 states of indium monoiodide: Ground state dissociation energy and photodissociation yield of In(6s2S1/2)

King,Herring,Eden

, p. 931 - 937 (1999)

The dissociation energy of the InI ground state (X1Σ+(O+)) and the relative yield of In(6s 2S1/2) from the photodissociation of InI by sequential two-photon absorption have been measured by laser-indu

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